Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs

Abstract:

In this work, the improvement of SiC power MOSFET performance achieved using high-κ gate-dielectrics instead of the standard SiO2 is investigated by means of advanced gate-impedance characterization. The benefit of using high-κ gate-dielectrics with high dielectric constant is demonstrated by comparing SiC MOSFETs with pure high-κ, a stack of SiO2/high-κ, as well as pure SiO2. Namely, the fabricated high-κ SiC MOSFETs show a superior performance to commercial SiC MOSFETs with SiO2/SiC interface with respect to channel resistance and interface quality. The proposed characterization approach is non-destructive and applicable to packaged power devices.

• Periodical: Materials Science Forum (Volume 1091)
• Pages: 67-71
• DOI: https://doi.org/10.4028/p-2388hx
• Online since: June 2023
• Authors: Salvatore Race*, Ivana Kovacevic-Badstuebner, Roger Stark, Alexander Tsibizov, Manuel Belanche Guadas, Yulieth Arango, Gianpaolo Romano, Lars Knoll, Ulrike Grossner
• Keywords: Channel-Drift Resistances, C-V Characterization, Gate Impedance, High-κ Dielectric, SiC MOSFETs

References

[1] K. Puschkarsky et al.: IEEE Transactions on Electron Devices Vol. 66, (2019) pp.4604-4616

[2] S. Wirths et al.: 32nd Int. Symp. on Power Semic. Dev. and ICs (ISPSD), 2020.

[3] S. Wirths et al.: 31st Int. Symp. on Power Semic. Dev. and ICs (ISPSD), 2019.

[4] R. Stark et al.: IEEE Transactions on Power Electronics Vol. 37 No. 9 (2022) pp.10572-10584

[5] S. Race et al.: 34th Int. Symp. on Power Semic. Dev. and ICs (ISPSD), 2022.

[6] P. Fiorenza et al.: IEEE International Reliability Physics Symposium (IRPS), 2022, pp. 3B.3-1- 3B.3-5