Lifetime Projection of Bipolar Operation of SiC DMOSFET

Christian Schleich; Maximilian Wolfgang Feil; Dominic Waldhoer; Aleksandr Vasilev; Tibor Grasser; Michael Waltl

doi:10.4028/p-9i494d

Paper Titles

Investigation on Switching Characteristics of 3.3kV SiC Power MOSFETs with SiO₂/ SiN Gate Stack
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Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrinsic Body Diode and Embedded SBD
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Impact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETs
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Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs
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Lifetime Projection of Bipolar Operation of SiC DMOSFET
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Shear Strength Analysis of Rock due to the Effect of Surface Roughness Based on Laboratory Testing and Numerical Modeling
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External Shear Strengthening of RC Beams with Anchored Geopolymer Fiber Mortar Panel: An Experimental Study
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Failure Mode of GFRP Bar RC Beams Using GFRP Sheet as Shear Reinforcement
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Strength Development of Seawater Mixed and Cured Concrete with Various Replacement Ratios of Fly Ash
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HomeMaterials Science ForumMaterials Science Forum Vol. 1091Lifetime Projection of Bipolar Operation of SiC...

Lifetime Projection of Bipolar Operation of SiC DMOSFET

Abstract:

We show the superior threshold voltage V_th and on resistance R_on stability of a SiC DMOStechnology at bipolar gate-drive operation. Therefore, the defect parameters of a two-state non-radiativemulti-phonon model to capture the charge trapping kinetics of oxide and interface defects is calibratedwithin our simulation framework Comphy by data extracted from measure-stress-measure (MSM) se-quences. An extrapolation of the device degradation at operating conditions renders bias temperatureinstabilities (BTI) a minor threat to on-state loss increase.

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Periodical:

Materials Science Forum (Volume 1091)

Pages:

73-77

DOI:

https://doi.org/10.4028/p-9i494d

Citation:

Cite this paper

Online since:

June 2023

Authors:

Christian Schleich, Maximilian Wolfgang Feil, Dominic Waldhoer, Aleksandr Vasilev, Tibor Grasser, Michael Waltl*

Keywords:

Bias Temperature Instabilities, Charge Trapping, Non-Radiative Multi-Phonon Model

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Creative Commons CC BY 4.0

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* - Corresponding Author

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