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The basic idea was to establish a periodical international forum presenting multiscale approaches in fati gue and fracture of materials.
Therefore, respective sections focused on atomistic models, models based on crystal defects, nu meri cal and statistical models based on continuum mechanics, advanced experimental methods and relationships between structure and mechani cal prope11ies appeared during the MSMF-2 conference in 1998.
Nearly 150 scientists from 2 1 countries all over the world presented a vari ety of multiscale approaches in modeling and testing deformati on and fracture processes in engineering materials.
It is my pleasure to thank the editorial board of the journal Materi als Science Forum fo r the readiness to publish this vol ume devoted to MSMF-4.

The forum took place in Gifu, Japan, 24 years ago for the first time.
The overarching goal of this conference was to provide an international forum for the representation and discussion of research results in lubrication, friction, wear, and development of the tribological systems pertaining to manufacturing processes.
Three plenary lectures were given covering: (a) Advances in tribological coatings for superlubricity and ultra-high wear resistance, (b) An integrated experimental and molecular modelling approach to investigate tribological mechanics in hot rolling of metal, and (c) Overview of metal forming research in Indian Academia.
We would also like to extend our gratitude to authors who were devoted to advancing the understanding of tribological phenomena pertaining to a broad range of manufacturing processes.
These proceedings provide a record of efforts by international researchers working on tribology for manufacturing systems, and we hope that the presented articles will be helpful for you in searching for innovative engineering solutions.

Alberto Lamego, 2000, 28013-602, Campos dos Goytacazes, Brazil. 2 UENF - State University of the Northern Rio de Janeiro, LAMAV – Laboratory of Advanced Materials; Av.
Alberto Lamego, 2000, 28013-602, Campos dos Goytacazes, Brazil. 3IME - Military Institute of Engineering, Department of Materials Science, Praça General Tibúrcio, 80, 22290-270, Rio de Janeiro, Brazil.
All tests an experiment were carried out at the Laboratory of Civil Engineering, LECIV, in the Center of Science and Technology, CCT, of the state University of the Northern Rio de Janeiro, UENF, in Campos dos dos Goytacazes.
Forum Vols. 775-776 (2014), p. 69
Rethwisch: Material Science and Engineering: An Introduction.

Preface The 2013 International Forum on Computer and Information Technology (IFCIT 2013) was held in Shenzhen, China, 24-25 December 2013.
The IFCIT2013 brought together scientists and researchers from 12 countries, affiliated with universities, technology centers and industrial firms to debate topics related to advanced technologies for computer application and information technology application, which would enhance the sustainable development of this field.
The technical papers included in this volume on the following topics: Databases, Data Processing and Data Management, Parallel and Distributed Computing, Computer Network Technology and Applications, Software Engineering, E-Commerce and E-Government, Multimedia Technology and Application, Computer Vision and Image Processing Technology, Artificial Intelligence, Intelligent Algorithms and Computational Mathematics, Computer Aided Design and Research, Communications Technology and Signal Processing, Electronic Devices and Embedded Systems, Intelligent Instruments, Techniques for Detection and Testing, Sensors and Measurement, Automation and Control, Information Technologies in Engineering Management, Enterprise Resource Planning and Management System, Information Technologies in Education, etc.
We sincerely hope that the 2013 International Forum on Computer and Information Technology is a significant step forward.
(ID: 212.3.110.94-03/03/14,10:09:30)2013 International Forum on Computer and Information Technology (IFCIT 2013) Conference Organization Co-Chairmen Prof.

China 3 Department of Biomedical Engineering, Fourth Military Medical University, Xi'an, 710032, P.
China 4 Key Laboratory for Advanced Materials Processing Technology, Ministry of Education & Center of Organ Manufacturing, Department of Mechanical Engineering, Tsinghua University, Beijing, 100084, P.
Forum Vol. 250 (1997), p.151 [2] M.E.
Forum Vol. 514-516 (2006), p.980 [3] Z.
Forum Vol. 532-533 (2006), p.745 [16] T.

The feasibility of porous SiC for bio–engineering has been shown in pioneering works by A.J.
Saddow, Silicon carbide biotechnology: biocompatible semiconductor for advanced biomedical devices and applications, Elsevier, Amsterdam, 2012
Gorga, Nanofibrous composites for tissue engineering applications, WIREs Nanomed.
Forum 527–529 (2006) 751–754
Forum 483–485 (2004) 269–272

Enhanced Performance of the Non-Polar Ultraviolet Light-Emitting Diodes with Lattice-Matched Quaternary Quantum Barriers Qian Dai1,a,*, Xiong Zhang2,b, Zili Wu2,c and Xianghua Zeng3,d 1School of Network and Communication Engineering, Jinling Institute of Technology, Nanjing, Jiangsu, China 2Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu, China 3College of Physics Science and Technology, Yangzhou University, Yangzhou, Jiangsu, China adaiqian@jit.edu.cn, bxzhang62@aliyun.com, c230189117@seu.edu.cn, dxhzeng@yzu.edu.cn Keywords: non-polar AlGaN-based UV-LED, AlInGaN quaternary barriers, lattice match, internal quantum efficiency Abstract.
In this paper, the electrical and optical characteristics of a non-polar a-plane AlGaN-based UV-LED with lattice matched quantum barriers along the [1-100] direction were intensively analyzed with the advanced physical model of semiconductor devices (APSYS) simulation program.
Forum Vol. 68 (1996) p. 40 [20] Y.
Forum Vol. 158 (2011) p.
Forum Vol. 117 (2020) p. 012105.

Forum, Vol. 658 (2010), p467
Forum, Vol. 620(2009), p481
Forum Vol. 622(2009), p485
Forum Vol. 610(2009), p323
Forum, Vol. 613(2009), p316

From the engineering point of view, SiC hot-wall epitaxy is a very important process in SiC semiconductor processes.
The requirements for the epitaxial process strongly depend on the devices, so there are many investigations from fundamental to engineering levels.
Design of Engineering Epitaxial Reactor.
From the engineering points of view, it is necessary to keep good uniformity of both epitaxial layer thickness and doping concentration, inside a wafer and between wafers.
In the experiment, there are lots of investigations that try to understand the fundamental processes and also try to develop engineering reactors.

Template assisted ultrasonic process synthesis and luminescent properties of Eu3+ doped LaPO4 nanocrystals Yanbo Wu1,a, Peng Sun1,b, Hongquan Yu1,c, Sisi Zeng1,d 1College of Environmental Science and Engineering, Dalian Jiaotong University, Dalian, Liaoning 116028, PR China awuyanbo_djd@126.com, bsunpeng417@163.com, c yuhq7808@yahoo.com.cn, das_zeng@126.com Keywords: ultrasonic method, LaPO4:Eu3+, PVP, CTAB, P123, luminescent properties Abstract.
Since this report, optical properties of nanosized luminescence materials have been investigated extensively due to the possibilities for advanced applications, especially for improving the spatial resolution of display units such as high-resolution cathode-ray tubes (CRTs)[2] and plasma display panels (PDPs)[3].
Forum Vol 840 (1999), p.11
Forum Vol 27(2009), p 182
Forum Vol 8 (1974), p 331