Search results

Rotation’s effect on anti-bending force Table 1 Values of k (kPa) under different strain and strain rates Strain rate [s-1] <1.0 ≥1.0 Strain 0-0.10 2.43 19.00 ≥0.10 14.60 28.60 k is acquired by fitting the experimental data acquired by Rashid et al using Eq. (1) [11].
Reduction in the penetration force is thought to be the main cause for the decreased bending in Fig.6 (a).
However, at a small rotational speed (0-75 rpm), reduction in penetration force was not evident. p-value is larger than 0.5 at a low rotational speed (≤75 rpm), implying no significant change in penetration fore as the speed increases from 0 rpm to 75 rpm.

The possibility of using metallurgical wastes, sludge of mine water, water treatment waste as reagents for industrial wastewater treatment was examined, improvement of their cleaning performance and reduction of operating costs of the enterprise when changing the agent entry order [8].
According to the experimental data, the minimum concentration or the absence of "active" silica acid fractions xSiO2·nH2O (on silicon) in the solution was detected by 15 hours after treatment, due to the gradual formation of oligometric and polymeric forms (Fig. 4).
While increasing pH it was observed reduction in the concentration of "active" silica acid fractions in solution, which include (monomer, dimers, low molecular weight polymers).

An increase in the pad count with the size reduction requires a larger number of dependable contacts using a probe card during electrical checking.
At R.T., Ni-48.0 at. % Ti film exhibits superelasticity whereby residual strain in the film does not remain after unloading, although the data are omitted here.
If contact area is expanded and thicker Au film is deposited, the contact resistance will probably make a drastic reduction.

The elastic-plastic fracture Base metal Welded matarials Specimen CF8M SA508 cl.3 Virgin 3600hr degraded Tensile strength (MPa) 604 640 597 646 Elongation (%) 71.4 9.6 45.0 57.1 Reduction of area (%) 66.9 64.9 58.9 63.4 Crack extension (mm) 0 1 2 3 4 5 6 7 J value (KJ/m2 ) 0 200 400 600 800 1000 No.1 Power law regression line Blunting line 0.15mm Exclusion line 1.5mm Exclusion line 0.2mm offset line J=598.45(∆a)0.2956 Crack extension (mm) 0 1 2 3 4 5 6 7 J value (KJ/m 2) 0 200 400 600 800 1000 1200 1400 No.4 Power law regression line Blunting line 0.15mm Exclusion line 1.5mm Exclusion line 0.2mm offset line J=460.43(∆a)0.5730 Crack extension (mm) 0 1 2 3 4 5 6 7 J value (KJ/m 2) 0 200 400 600 800 1000 1200 No.5 Power law regression line Blunting line 0.15mm Exclusion line 1.5mm Exclusion line 0.2mm offset line J=446.82(∆a)0.5110 Crack extension (mm) 0 1 2 3 4 5 6 7 8 9 10 J value (KJ/m 2) 0 200 400 600 800 1000
Fig. 1 indicates that the trend toward increased aging time as an increased ferrite phase area, which is linked to a reduction in the relative toughness of the material.
Since the JIC value of the HAZ of CF8M marks are higher than the CF8M base metal, the use of data from CF8M base metal could possibly be used to estimate the integrity from a conservative point of view without an extra elastic-plastic fracture toughness test of the HAZ of CF8M.

The precipitation of secondary phases leads to a reduction of corrosion resistance because they deplete surrounding phases of Cr and Mo [1].
The specimens were then heat treated according to the data reported in table 2.
On the other hand, such reduction of performance of SAF 2304 in relation to the polarization tests, lies on the formation of a large amount of secondary austenite (γ2) that occurs together with the nitrides precipitation. [16] (figure 2).

Batch Yield strength σ0,2, [МPа] Tensile strength σв, [МPа] Rel. elongation δ, [%] Rel. reduction ψ, [%] I 524 635 26 72 II 477 574 22 79 Real microstructure was characterized on metallography specimens sampled from the 1/3 of the sheet thickness in Rolling direction (RD) – normal direction (ND) plane.
Aztec 3.1 and hkl Channel 5 software packages were used for acquiring and post-processing of EBSD data.
For the reduction of damaged surface layer, it was used 10 minutes forceless polishing with colloidal silica suspension 0,05 mm at last polishing stage.

Delamination in the layers ahead of the crack tip results in a reduction and redistribution of the local stress which makes cracks difficult to propagate through the composite.
A total reduction of 98% was achieved after all the preparation process.
The stress, σ, and the strain, ε, were converted from the recorded raw data according to the following equations[24]

A DPB typically results in a large leakage current and an Ohmic type of behavior (see as an example the IV curves in Fig. 3), whereas the influence of SFs under the contact is a gradual reduction of the barrier height with increasing presence of SFs
This could imply two problems while extracting the diode parameters from C-AFM I-V data: The area has to be well known, and the saturation current, which can be extracted from the linear region in the ln(I) vs.
This result demonstrates that improving the crystal quality of the 3C-SiC, with ensuing reductions of the leakage currents, would allow operational large area Schottky diodes in this material.

These lead to the significant decrease in friction effect and a reduction of grinding forces.
It is generally true that the surface finish degrades with the increasing depth of cut, and this agrees with the case for the data in Fig. 5.
In the state of the low wheel speed less than 25 m/s, ultrasonic vibration has an obviously positive effect on the reduction of surface roughness compared with CG, while as the wheel speed is increased to more than 25 m/s, the effect of vibration on surface roughness becomes less.

There are several papers that have predicted the cell performance losses as a result of minority carrier lifetime reduction [16], [6].
Simulations of the cell performance degradation clearly show that the degradation can be explained by the reduction in carrier diffusion length being a consequence of an increase in recombination centers. [6] Recombination reduces both the photocurrent, through the probability of carrier collection, and the voltage, by increasing the dark current. [17] In addition Bothe et al has found equal time decay constants for degradation profiles acquired by VOC measurements and lifetime measurements respectively. [15] An issue regarding the measurement of losses in minority carrier diffusion length by IV-characteristics is, however, the insensitivity to changes in minority carrier diffusion lengths due to high backside recombination velocity.
Corrections of the acquired data are, however, crucial.