Search results

Introduction Within the next few years the amount of energy produced by renewable energies will increase, while at the same time the number of cars powered by e-drives grows.
Within this approach the recorded signals were used for the implementation of a real-time closed-loop control for the laser power and thus intensity, in order to reduce the number of welding defects and to stabilize the welding process. [1] Furthermore, [4] used laser sources with higher intensities for welding in continuous wave mode.
If this upper limit is reached, enhanced evaporation occurs and consequently the number of spatters increases and the cross-sectional area is reduced, as can be seen for CuSn6 and wire D in Fig. 4 (b).
Moreover, no change in grain size can be observed when knurled filler wires are used.

With a decrease in the number of layers, a transition occurs from an indirect-gap semiconductor to a direct-gap semiconductor with a simultaneous smooth increase in the band gap value.
In the papers [19, 20], authors used MoO3 films obtained through the atomic layer deposition technique as a source of Mo to grow homogeneous MoS2 structures with excellent control of the layer number and size of crystallites over the entire substrate using CVD/sulfurization process.
The number of WS2 layers is estimated from the difference in Raman shift between modes E and A, which is equal to 66.5 ± 0.1 cm-1.
Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary.

The measuring principle of this method is based on the correlation between structural properties (e.g. grain size), electromagnetic properties (conductivity, permeability) and the mechanical properties of the sheet metal material [17].
Therefore the amount of data or the number of measurement curves was virtually expanded.
The number of layers, the number of neurons and the type of activation function were varied until a sufficient model accuracy could be achieved (see Fig. 6 and Table 3).

Schematically, a porous catalytic layer (several tens micrometers) consists of ground monolithic carbon aerogel (grain size about 1 µm) agglomerated by Nafion used as a binder.
The electronic density of a given medium is ii iii ieAe MNZNdr ∑∑Ν=ρ (9) where ΝA is the Avogadro number, re the electron radius, d the density, Z and M, the atomic number and mass respectively).
It follows that the number of molecules, from which the surface area is determined, is smaller than it would be in larger pores.

The numbers of layers was varied from 2, 4, 8, 12, 16 and 20.
The grain height increased from 25.2 nm to 50.8 nm with a increase of layers.
The higher the number of layers, the higher silver nanoparticles concentration and the higher the crystallinity values were obtained for the LBL deposited nanocomposites.
Water vapor permeability (WVP) and oxygen permeability (OP) was gradually decreased as the number of layers increased from 2 to 20 layers.
The deposition of the silver nanoparticles on the films was controlled by the number of deposition cycles.

Actually, an evolution of the average value of the grain size is observed and overall a thermo-mechanically affected zone (TMAZ) is found close to the welding line.
In [8] Varis and Frost proposed an experimental lightweight linear friction welding machine able to explore frequencies of oscillation up to 1 kHz, for a number of different amplitudes of oscillation.
Finer prior-beta grains were obtained in the flash as compared to the parent material due to dynamic recrystallization.

A significant number of papers have been published demonstrating the advantages of this new method (see e.g. [1-4]).
Only for the heavily doped samples photo-illumination weakly increases the fluctuations, which we related to the charging of impurities decorating pin holes, the charging of dislocations and grain boundaries [23].
Considering the granular-like microstructure of GaN epilayers we assumed that similar PL enhancement may also be observed for ZnO nanoparticles, for which impurity accumulation at grain boundaries (surface of nanoparticles), as observed for GaN, may passivate the surface states and enhance the rate of radiative decay.

At the later stage, Cu2+ ions diffuse to the surface through the grain boundaries and O2- counter diffuse [59-62] and as a result Cu2O layer is formed beneath the CuO layer.
The grain boundary runs along the entire length of the nanowires and acts as a path for short-circuit diffusion transport of Cu ions to the tip for the growth of nanowires [60].
Nandedkar, The effect of growth parameters on the aspect ratio and number density of CuO nanorods, J.

The conversion of an organic material into carbon is a complex process involving a wide variety of reactions and a great number of intermediates.
Experimental Composites were fabricated by mixing olive stones biomass (as grains with diameter less than 300 µm) in different proportions (80% and 40% w/w) without or with the naphthalene, as an aromatic precursor (40% w/w) with AlCl3 as catalyst (1/1 mol/mol or 0.95/1 w/w) and novolac (20% w/w) with hexamethylenetetramine ("hexa") (7/2 w/w) as curing agent and the proper mixture was placed into small cylindrical moulds.
The carbon fibres used have the following characteristics : filament diameter: 7 µm, number of filaments: 24000, cross section of the total fibre: 0.90 mm2, average length immersed in the electrolyte solution: 15 mm, corresponding immersed surface (assuming that all monofilaments are separate, without common surface) : 7913 mm2 = 79 cm2.
The latter peak is increased with increasing number of cycles.

The main characteristics of memory transistors are the amplitude and width (duration) of writing/erasing (W/E) voltage pulses, the width of the memory window (the difference between the threshold voltage for low and high state), the endurance (number of W/E cycles before degradation), and the retention (rate of threshold voltage change due to loss of the stored charge) properties.
This Si or Ge layer is either covered by another dielectric layer, or the Si grains themselves are oxidized.
Retention characteristics were also very good, but the memory window shifted slightly with increasing number of W/E cycles.
The structure with stacked tunnel layer exhibited negligible degradation up to 104 W/E cycles, while the memory window of the reference structure shifted with increasing number of W/E cycles.