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If the binder is slightly deformable, the fibres cannot move, so only a small number of them support loading.
The surfaces of metal samples were processed by grinding, wet polishing with aluminum oxide and polishing with diamond paste for different grain sizes.

SN=-10log1NY2 (2) where, N= number of observation and Y= observed data.
The wear resistance of composites improves due to grain refinements and the wear rate of composites shows inversely correlated with material hardness.

Fortunately, crystal symmetry and the choice of reference axes reduce the number even further [1].
(b) Electron diffraction pattern for HR Transmission Electron Microscopy on a selected grain (microcrystal) of the same sample of orthorhombic PbNb2O6.
A number of other countries (especially India, Japan, France, and Great Britain) have built and operated fast, metal-cooled reactors and supporting diagnostic instrumentation for in-service inspections.
It has been extensively studied for high temperature gas- and pressure-sensors for a number of challenging environmental applications.
Sakata, Grain orientation effects on electrical properties of bismuth layer‐structured ferroelectric Pb(1−x)(NaCe)x/2 Bi4Ti4O15 solid solution, J.

This large number of papers reflects the considerable academic and industrial interest in this topic.

Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP.

They reported that the release kinetics depends on the number of applied layers and the drug concentration.
The number of osteoblast cells was the same after the first day of the study for all the samples and controls i.e. un-anodized titanium.
However, results after the second day showed greater cell numbers on drug coated titania templates by either methods compared to controls.
The porous and nanostructured Zn-incorporated TiO2 coatings are built up from pores smaller than 5 lm and grains 20-100 nm in size, in which the element Zn exists as ZnO.
Recent progress in ultrafine-grained/nano-grained (UFG/NG) titanium permits a consideration for TiO2 films deposited on nano-grained titanium for antithrombogenic application such as artificial valves and stents.

Because of the strongly nonparabolic and anisotropic nature of valence subbands, the states of interest have to be tabulated at a number of k points in the irreducible wedge of the 2D Brillouin zone.
The graded-composition material contains a large number of dislocations, but these terminate at the interface with the overlying layer, which is prepared as a thick ~1 µm) buffer at the strain-balance alloy composition.
The displayed portion of each layer has identical number of lattice cells in the plane.
Both techniques offer growth of rather high quality cascades, with a very large number of periods (up to 600 in case of simple structure of a period).

sample number Heat treatment regime TR [K] Мs [K] Мf [K] Аs [K] 1 Annealing at 770 K for 2 hours 315 250 195 295 2 Annealing at 770 K for 2 hours 311 279 267 319 3 Annealing at 770 K for 2 hours 335 305 295 - 4 Without heat treatment 310 - - - 5 Without heat treatment 320 250 205 - Fig. 3.
The numbers near to the curves are the sample numbers.
The other cause of a decrease in martensitic temperatures may be a variation in the chemical composition of the alloy or a decrease in grain size [1].
The energy of replacement Er, is approximately ten times lower than the energy of displacement Ed and the number of exchanges is five times higher than the number of displacements during neutron irradiation [24].
An increase in neutron fluence leads to a rise in the number of displacement spikes and, as a result, an increase in sites for nucleation of martensite phase on cooling.

Crystallographic sites in Y-type hexaferrites lattice, number of ions per molecule, and spin orientation of magnetic ions.
These samples were consequently examined by SEM imaging to investigate the grain size and the microstructure of the samples.
The distribution of metal ions over the different sites is determined from the relative intensities of the sub-spectral components, which, in principle, are proportional to the number of Fe ions in the corresponding sets of sites [62]. 4.4.1.
These numbers were obtained by the multiplication of the relative intensity of a given component by the total number of Fe ions (which is 11 in the sample).
The significant decrease in the number of Fe3+ ions in the (6cIV*+3bVI) sites indicates higher substitution of non-magnetic ions at these sites, displacing Fe ions to fill up the 18hVI site.

The number of electrons at a given energy n(E) is given by: 1 KT )E-(E exp 1 D(E)f(E)D(E) n(E) F    (1) D(E) is the density of electronic states (DOS) and f(E) is the Fermi-Dirac distribution function.
From the continuity equations it is possible to obtain minority carrier concentrations in the n-type and p-type regions [19]: For electrons in the p-type region:   0G(x) τ n(x)n x(x)n D e 0 p 2 p 2 e    d d (2) For holes in the n-type region:   0G(x) τ n(x)p x(x)p D h 0 n 2 n 2 h    d d (3) The first term represents the change in minority carrier concentration per second due to diffusion caused by concentration gradient; the second term represents the number of carriers that are lost by recombination per second and the third term represents the number of carriers generated by the incident radiation per second.
G(x) depends on light absorption coefficient, the solar cell geometry and radiation intensity; i.e. the number of electron-hole pairs created by the incident radiation depends on the number of incident photons.
Notice that in polycrystals, grain boundaries are populated with defects and adsorbed impurities which act as traps that favor recombination and conspire against efficiency in traditional solar cells.
Also current at x=0, Je, can be found since: 0x e e x (x)n qDJ   d d (19) IPCE values for each wavelength can be obtained from electron flow at x=0 corresponding to onephoton flux:                                                     e e e e e e e e e α(λ)d e e e 2 e 2 e e α(λ)L L d sinh L d cosh D sL L d )sinh D sL Lλ(eα(λ)L D sL Lλα1 Lα(λ) λq J IPCE (20) Φ(λ) is the photon flux, i.e., the number of incident photons per unit area and per second.