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The k term represents the number of independent variables.
These observations are consistent with those of Mussatto et al. (2007) [76] when the pH value of the black liquor from brewer’s spent grain was reduced from 12.56 to 2.15.
Frost, “Multiple regression analysis: Use adjusted R-squared and predicted R-squared to include the correct number of variables,” Minitab Blog, vol. 13, no. 6, 2013
[60] Minitab Blog Editor, “Multiple Regression Analysis: Use Adjusted R-Squared and Predicted R-Squared to Include the Correct Number of Variables,” 2013.
Roberto, “Lignin recovery from brewer’s spent grain black liquor,” Carbohydr.

They reported that the release kinetics depends on the number of applied layers and the drug concentration.
The number of osteoblast cells was the same after the first day of the study for all the samples and controls i.e. un-anodized titanium.
However, results after the second day showed greater cell numbers on drug coated titania templates by either methods compared to controls.
The porous and nanostructured Zn-incorporated TiO2 coatings are built up from pores smaller than 5 lm and grains 20-100 nm in size, in which the element Zn exists as ZnO.
Recent progress in ultrafine-grained/nano-grained (UFG/NG) titanium permits a consideration for TiO2 films deposited on nano-grained titanium for antithrombogenic application such as artificial valves and stents.

This large number of papers reflects the considerable academic and industrial interest in this topic.

Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP.

Because of the strongly nonparabolic and anisotropic nature of valence subbands, the states of interest have to be tabulated at a number of k points in the irreducible wedge of the 2D Brillouin zone.
The graded-composition material contains a large number of dislocations, but these terminate at the interface with the overlying layer, which is prepared as a thick ~1 µm) buffer at the strain-balance alloy composition.
The displayed portion of each layer has identical number of lattice cells in the plane.
Both techniques offer growth of rather high quality cascades, with a very large number of periods (up to 600 in case of simple structure of a period).

sample number Heat treatment regime TR [K] Мs [K] Мf [K] Аs [K] 1 Annealing at 770 K for 2 hours 315 250 195 295 2 Annealing at 770 K for 2 hours 311 279 267 319 3 Annealing at 770 K for 2 hours 335 305 295 - 4 Without heat treatment 310 - - - 5 Without heat treatment 320 250 205 - Fig. 3.
The numbers near to the curves are the sample numbers.
The other cause of a decrease in martensitic temperatures may be a variation in the chemical composition of the alloy or a decrease in grain size [1].
The energy of replacement Er, is approximately ten times lower than the energy of displacement Ed and the number of exchanges is five times higher than the number of displacements during neutron irradiation [24].
An increase in neutron fluence leads to a rise in the number of displacement spikes and, as a result, an increase in sites for nucleation of martensite phase on cooling.

The number of electrons at a given energy n(E) is given by: 1 KT )E-(E exp 1 D(E)f(E)D(E) n(E) F    (1) D(E) is the density of electronic states (DOS) and f(E) is the Fermi-Dirac distribution function.
From the continuity equations it is possible to obtain minority carrier concentrations in the n-type and p-type regions [19]: For electrons in the p-type region:   0G(x) τ n(x)n x(x)n D e 0 p 2 p 2 e    d d (2) For holes in the n-type region:   0G(x) τ n(x)p x(x)p D h 0 n 2 n 2 h    d d (3) The first term represents the change in minority carrier concentration per second due to diffusion caused by concentration gradient; the second term represents the number of carriers that are lost by recombination per second and the third term represents the number of carriers generated by the incident radiation per second.
G(x) depends on light absorption coefficient, the solar cell geometry and radiation intensity; i.e. the number of electron-hole pairs created by the incident radiation depends on the number of incident photons.
Notice that in polycrystals, grain boundaries are populated with defects and adsorbed impurities which act as traps that favor recombination and conspire against efficiency in traditional solar cells.
Also current at x=0, Je, can be found since: 0x e e x (x)n qDJ   d d (19) IPCE values for each wavelength can be obtained from electron flow at x=0 corresponding to onephoton flux:                                                     e e e e e e e e e α(λ)d e e e 2 e 2 e e α(λ)L L d sinh L d cosh D sL L d )sinh D sL Lλ(eα(λ)L D sL Lλα1 Lα(λ) λq J IPCE (20) Φ(λ) is the photon flux, i.e., the number of incident photons per unit area and per second.

Crystallographic sites in Y-type hexaferrites lattice, number of ions per molecule, and spin orientation of magnetic ions.
These samples were consequently examined by SEM imaging to investigate the grain size and the microstructure of the samples.
The distribution of metal ions over the different sites is determined from the relative intensities of the sub-spectral components, which, in principle, are proportional to the number of Fe ions in the corresponding sets of sites [62]. 4.4.1.
These numbers were obtained by the multiplication of the relative intensity of a given component by the total number of Fe ions (which is 11 in the sample).
The significant decrease in the number of Fe3+ ions in the (6cIV*+3bVI) sites indicates higher substitution of non-magnetic ions at these sites, displacing Fe ions to fill up the 18hVI site.

The data were taken with substantially similar condition of TiO2 loading in the range of 10-12 g m 2 where the TiO2 layer contained a large TiO2 grain (250 nm) for light scattering enhancement and had porosity of about 60%.
Only a limited number of materials can replace Pt.
The number of unit cells connected in this fashion depends on the output voltage required.

In simple terms, confining the antibonding wavefunction which is produced by moving an electron from a π valence state to a π∗ conduction band state to a small number of carbon-carbon bonds causes substantial rearrangement of the valence electrons so that the bond lengths change in response.
The absence of grain boundaries and the fact that the amorphous state is not associated with distorted or broken bonds can lead to trap-free charge transport - a key requirement in electrophotography.
The achievable quantum efficiency for an organic LED that emits from spin singlet excitons is determined by this and a number of other factors, often expressed as , (1) where η is the efficiency (photons out per electron injected), q is the photoluminescence efficiency, γ is the fraction of injected electrons and holes that recombine to form an exciton within the emissive semiconductor layer, rst is the fraction of excitons that are formed as spin-singlets, and fout is the fraction of the light generated within the device that is able to leave it in the forward direction.