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Kim 3,c and Kwang Seon Shin 1,d 1 School of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University, Seoul 151-742, Korea 2 Innocast, INC., Ansan 425-836, Korea 3Center for Advanced Aerospace Materials Pohang University of Science and Technology, Pohang 790-784, Korea a myhome@snu.ac.kr, bbigmountain@innocast.co.kr, cnjkim@postech.ac.kr, d ksshin@snu.ac.kr Keywords: Creep Resistant Magnesium Alloys, Die Casting, Microstructure, Tensile Properties, Creep Properties Abstract.
Forum Vol. 419-422 (2003), p. 57 [2] M.O.
Forum Vol. 419-422 (2003), p. 285 [4] C.D.
Forum Vol. 475-479 (2005), p. 537 [7] M.S.
Forum Vol. 419-422 (2003), p. 419 [8] I.P.

Bălă, The stability study of dynamic systems using the Leapunov function method, Advanced Engineering Forum ( ADEM 2018), Volume 34 (2019) 123-128
Bălă, Geometric dynamics used in the study of mechanical methods, Advanced Engineering Forum ( ADEM 2016), Volume 27 (2018) 142-146
Bălă, Quantitative and qualitative methods in the study of some dynamic systems, Advanced Engineering Forum ( ADEM 2014), Volume 13 (2015) 168-171

High Efficiency Phosphorus Flocculants Prepared with Red Mud for Treating Lake Water ZHANG Wen-qin1, a, LI Bo-lin1, b, LI Ye1, c and LIANG Ya-nan1, d 1School of Resources and Environmental Engineering, Wuhan University of Technology, Wuhan 430070, China a15071297794@163.com, bbolly1221@163.com, c95466357@qq.com, d 429799232@qq.com Keywords: Slag; Acid modified; Flocculant; Phosphorus removal.
Because of the advantages of flocculant treatment, such as low cost and high efficiency [2], it has become one of the best options for advanced removal of phosphorus from wastewater.
Forum Vol. 36 (2002), p. 1306-1312 [2] E.
Forum Vol. 32 (2005), p. 195-203 [3] P.
Forum Vol. 92 (2008), p. 16-25 [4] N.

In principle, low background doping levels as low as 1013cm-3 may be reached using advanced chemical vapor deposition (CVD) of epitaxial layers.
Highly advanced 2D and 3D X-ray based in-situ visualization of the PVT process bridges between production and basic process development.
From a characterization point of view, dislocation may be visualized using KOH defect etching of SiC wafers (see Fig. 6e)[42, 43] and in a more advanced way by X-ray topography methods [44].
The final dislocation density in the real SiC boule exhibits a maximum in the central area of the SiC boule which is also well predicted in the more advanced CDD.
Wellmann, Advanced Engineering Materials, ja, 1900778 (2019) [38] M.

Research and design of forest environment monitoring system Jun Wanga, Xuewen Heb and Pengju Hec School of Mechanical and Electronic Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China amkfriend@126.com, bhxw993@vip.163.com, cpengjuhe@163.com Key words: wireless sensor network; environmental parameters; protocol conversion; data acquisition; ZigBee; GPRS Abstract.
Forum Vol. 12 (2009), P.49 (In Chinese) [4] HE Peng-ju, DAI Guan-zhong, CHENG Ming, etc: Journal of Transduction Technology.
Forum Vol. 19 (2006), p. 374 (In Chinese) [5] Sang Chen Ni, Yue Zhang: Advanced Materials Research.
Forum Vol. 130-134 (2011), p. 3904 [6] Information on http://www.zigbee.org/Specifications/ZigBee/NetworkTopology.aspx [7] Li Ma, Chun Lei Wang: Advanced Materials Research.
Forum Vol. 452-453(2012), p. 903

Stoemenos3,c 1 Department of Engineering, Cambridge, Trumpington Street, Cambridge, CB2 1PZ, UK. 2 Forschungszentrum Rossendorf, P.O.B. 510119, D-01314 Dresden, Germany. 3 Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece.
The model uses a standard heat flow model combined with an advanced multilayer optical model.
Cross-section TEM micrographs. 2(a) of the as deposited advanced FLASiC wafer and (b) of the advanced FLASiC structure after processing showing the transport of carbon from the upper layer to the lower layer and the growth of trapezoidal protrusions (TPs).
Forum Vol. 353-356 (2001) p. 151
Forum Vol. 457-460 (2004) p.175

Nishihara, Development of Friction Stir Forming, Materials Science Forum, 426-432(2003) 2971-2978
[5] T.Nishihara, K.Yamamura, Local Manufacture of MMC Using FSW, Materials Science Forum 539-543 (2007) 3733-3738
Charit, Friction stir processing: a novel technique for fabrication of surface composite, Materials Science and Engineering A341 (2003)307-310
Fujii, T.Nagaoka, M.Fukusumi, Effect of friction stir processing with SiC particles on microstructure and hardness of AZ31, Materials Science and Engineering, A433 (2006) 50–54
[8] M.Otsu, Y.Katayama, T.Muranaka, Effect of Difference of Tool Rotation Direction on Forming Limit in Friction Stir Incremental Forming, Key Engineering Materials,622/623-1(2014)390-397

Fatigue evaluation of hot mix asphalt (HMA) mixtures modified by optimum percent of TiO2 nanoparticles. in Advanced Engineering Forum. 2017.
Mechanics and pavement properties research of nanomaterial modified asphalt. in Advanced Engineering Forum. 2012.
Effect of Long-Term Aging on the Behavior of Batu Pahat Soft Clay-Modified Asphalt Mixture. in Advanced Engineering Forum. 2022.
Influence of aging on the physical properties and chemical compositions of asphalt binder with soft clay particles. in Advanced Engineering Forum. 2017.
Advanced Materials Research, 2013. 723: p. 459-465

Although Pidgeon Process has achieved certain technological advance in the past ten years, it is mainly by sacrificing energy, environment, and cheap labor.
Magnesium alloy is referred to as the most promising green engineering material.
It gets the extensive application in many fields: the aviation and space, mechanical engineering, metallurgy, automobile industry, telecommunications, and electronics.
Therefore, magnesium and its alloy become the chief exported goods. [3] Magnesium is known as the most promising green engineering material.
To a great extent, they develop by cheap resources and labor and at the cost of environment pollution, not by scientific and technological innovation and technical advance.

Despite recent advances in the quality and supply of 4H-SiC single-crystal wafers, progress regarding defect density and material performance is still needed and high volume production of prime crystal grade 200 mm 4H-SiC substrates remains a challenge [3-4].
Musolino et al., Microelectronic Engineering 274, 111976 (2023)
Forum 1062 (2022), pp 54-58
Cela et al., Defect and diffusion forum 425 (2023), pp 57-61
Brun et al., in Proceedings of the 2012 SEMI Advanced Semiconductor Manufacturing Conference, p. 67