Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiCTM Engineered Substrates for High Volume Manufacturing

Enrica Cela; Walter Schwarzenbach; Ramesh Shrestha; Gerhard Bast; Sam Shahidi; Gavin Simpson

doi:10.4028/p-Z2bqVH

Paper Titles

Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiC^TM Engineered Substrates for High Volume Manufacturing
p.1

Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
p.7

Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
p.13

Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
p.21

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
p.29

Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
p.35

Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
p.43

Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
p.49

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Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiC^TM Engineered Substrates for High Volume Manufacturing

Abstract:

Power devices electronics based on silicon carbide (SiC) are emerging as a breakthrough technology for a wide range of applications [1]. SiC engineered substrates provide a solution that fulfills power devices requirements, namely supplying high quality, ultra low resistivity materials. SmartSiC^TM substrates, based on Smart Cut^TM technology, combine the advantages of high quality single-crystal SiC and innovative pSiC handle material [2]. To achieve high volume manufacturing (HVM) of prime grade SiC engineered substrates, defects monitoring is crucial. This paper explains how a commercially available Deep-Ultraviolet (DUV) laser-based inspection system (KLA Surfscan® SC1) was successfully used for the quality control of SmartSiC^TM and single-crystal 4H-SiC in a production environment. Detection of both surface and grown-in defects was investigated, on 150 mm and 200 mm substrates. Statistical data were collected and utilized for driving quality and yield continuous improvement.

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Periodical:

Solid State Phenomena (Volume 375)

Pages:

1-6

DOI:

https://doi.org/10.4028/p-Z2bqVH

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Online since:

September 2025

Authors:

Enrica Cela*, Walter Schwarzenbach, Ramesh Shrestha, Gerhard Bast, Sam Shahidi, Gavin Simpson

Keywords:

DUV Inspection, Laser Light Scattering, Photoluminescence, SiC Engineered Substrates, Smart Cut™, SmartSiC™

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* - Corresponding Author

References

[1] T. Kimoto, Jpn. J. Appl. Phys. 54 040103 (2015).

Google Scholar

[2] C. Maleville, "SmartSiC™: a greener, faster and better technology for SiC" ICSCRM Conference, 2023.

Google Scholar

[3] M. Musolino et al., Microelectronic Engineering 274, 111976 (2023).

Google Scholar

[4] I. Manning et al., Mat. Sc. Forum 1062 (2022), pp.54-58.

Google Scholar

[5] S. Rouchier et al. "150 mm SiC engineered substrates for high-voltage power devices" ICSCRM Conference, 2021.

Google Scholar

[6] W. Schwarzenbach et al., "SmartSiCTM: Boosting SiC performance for high-voltage power applications," ICSCRM 2022.

Google Scholar

[7] E. Cela et al., Defect and diffusion forum 425 (2023), pp.57-61.

Google Scholar

[8] R. Brun et al., in Proceedings of the 2012 SEMI Advanced Semiconductor Manufacturing Conference, p.67.

Google Scholar

[9] J. Fan and P. K. Chu, Silicon Carbide Nanostructures, (Springer International Publishing Switzerland, 2014) pp.35-37.

Google Scholar

[10] T.Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology, (John Wiley and Sons, Singapore, 2014) p.51.

Google Scholar

[11] E. Cela et al., "Crystal originated defect monitoring and reduction in production grade SmartSiC™ engineered substrates." ICSCRM Conference, 2023.

DOI: 10.4028/p-s85vke

Google Scholar

[12] T.Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology, (John Wiley and Sons, Singapore, 2014) pp.147-149.

Google Scholar