Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer

Ze Yu Chen; Nadeemullah A. Mahadik; Michael Dudley; Balaji Raghothamachar; David A. Scheiman; Robert E. Stahlbush; Young Sang Kim; Michael W. Owen

doi:10.4028/p-I5U9fS

Paper Titles

Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
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Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
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Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
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Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
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Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
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Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
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Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
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Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes
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Investigation on Bipolar Degradation Caused by Micropipe in 3.3 kV SiC-MOSFET
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HomeSolid State PhenomenaSolid State Phenomena Vol. 375Formation Mechanism and Complex Faulting Behavior...

Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer

Abstract:

4H-SiC with 180 μm epilayer was subjected to UV exposure. Stacking fault expanded from basal plane dislocation (BPD) loop generated during growth in the epilayer was observed by UV Photoluminescence Imaging (UVPL) and X-ray Topograph (XRT) techniques. Interactions between partial dislocation, emanating from the BPD loop and gliding via recombination-enhanced dislocation glide mechanism, and threading screw/mix dislocations are detected and analyzed, where stacking faults migrate to different basal plane after the interactions. Such migration increases the faulted volume that can severely degrade reliability and performance of high power SiC devices by increasing reverse leakage current and on-state resistance and could eventually lead to device failure.

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Periodical:

Solid State Phenomena (Volume 375)

Pages:

35-41

DOI:

https://doi.org/10.4028/p-I5U9fS

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Online since:

September 2025

Authors:

Ze Yu Chen*, Nadeemullah A. Mahadik, Michael Dudley, Balaji Raghothamachar, David A. Scheiman, Robert E. Stahlbush, Young Sang Kim, Michael W. Owen

Keywords:

4H-SiC, Partial Dislocation Dipole, Stacking Fault, UV Photoluminescence Imaging, X-Ray Topography

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* - Corresponding Author

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