Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes

Yasuyuki Igarashi; Kazumi Takano; Yohsuke Matsushita; Takuya Morita

doi:10.4028/p-g8Pe23

Paper Titles

Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
p.13

Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
p.21

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
p.29

Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
p.35

Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
p.43

Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
p.49

Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes
p.55

Investigation on Bipolar Degradation Caused by Micropipe in 3.3 kV SiC-MOSFET
p.63

Suppression and Analysis of Bipolar Degradation in 4H-SiC PiN Diodes through Proton Implantation
p.69

HomeSolid State PhenomenaSolid State Phenomena Vol. 375Numerical Analysis of Correlation between UV...

Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes

Abstract:

We have proposed an E-V-C (Expansion-Visualization-Contraction) method by using UV irradiation, for screening potential defects which causes reliability issue called bipolar degradation in 4H-SiC devices. This method is based on the property that the REDG (recombination-enhanced dislocation glide) mechanism causing the bipolar degradation can be reproduced by UV irradiation. However, in order to apply this method as a screening, accurate quantification of the correlation between current density in forward bias and UV irradiance is required. This article describes how to set UV irradiation conditions (irradiance and irradiation time) to simulate forward biased current conditions.

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Periodical:

Solid State Phenomena (Volume 375)

Pages:

55-61

DOI:

https://doi.org/10.4028/p-g8Pe23

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Online since:

September 2025

Authors:

Yasuyuki Igarashi*, Kazumi Takano, Yohsuke Matsushita, Takuya Morita

Keywords:

Basal Plane Dislocation, Bipolar Degradation, Photoluminescence, Recombination-Enhanced Dislocation Glide, Screening, Single Shockley Stacking Fault, Surface Recombination Velocity, UV Irradiation

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