Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications

Chiara Nania; Domenica Raciti; Cristiano Calabretta; Fabiana Vento; Ruggero Anzalone; Enzo Fontana; Andrea Severino

doi:10.4028/p-4RM2er

Paper Titles

Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
p.13

Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
p.21

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
p.29

Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
p.35

Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
p.43

Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
p.49

Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes
p.55

Investigation on Bipolar Degradation Caused by Micropipe in 3.3 kV SiC-MOSFET
p.63

Suppression and Analysis of Bipolar Degradation in 4H-SiC PiN Diodes through Proton Implantation
p.69

HomeSolid State PhenomenaSolid State Phenomena Vol. 375Evaluation of 4HSiC Epitaxial CVD Process on...

Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications

Abstract:

The increasing demand for WBG materials like SiC has led STMicroelectronics to expand wafer diameter from 150 mm to 200 mm, enhancing production yield and reducing costs. However, this expansion poses challenges in preserving crystalline quality. This investigation examines the impact of defects on 200 mm wafers, focusing on Total Usable Area (TUA) and electrical performance, particularly in wafers with polytype inclusions and high basal plane dislocation (BPD) density. Although the results for non-standard wafers show a significant reduction in TUA and an increase in electrical failures, the overall distribution of functional and non-functional devices remains stable, indicating process consistency.

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Periodical:

Solid State Phenomena (Volume 375)

Pages:

43-47

DOI:

https://doi.org/10.4028/p-4RM2er

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Online since:

September 2025

Authors:

Chiara Nania*, Domenica Raciti, Cristiano Calabretta, Fabiana Vento, Ruggero Anzalone, Enzo Fontana, Andrea Severino

Keywords:

200 mm, 4H-SiC, BPD, Defectivity, EWS, LP-CVD, Polytype

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Creative Commons CC BY 4.0

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* - Corresponding Author

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