Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation

Ze Yu Chen; Qian Yu Cheng; Shan Shan Hu; Balaji Raghothamachar; Charles Carlson; Dannie Steski; Thomas Kubley; Florian Krippendorf; Michael Rüb; Robert Koch; Reza Ghandi; Stacey Kennerly; Michael Dudley

doi:10.4028/p-99wz0T

Paper Titles

Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiC^TM Engineered Substrates for High Volume Manufacturing
p.1

Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
p.7

Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
p.13

Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
p.21

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
p.29

Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
p.35

Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
p.43

Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
p.49

Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes
p.55

HomeSolid State PhenomenaSolid State Phenomena Vol. 375Analysis of Lattice Damage in 4H-SiC Epiwafers...

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation

Abstract:

Multi-step high energy ion implantation enables uniform doping to depths up to 12 µm in 4H-SiC epiwafers for superjunction devices but extent of lattice damage is of significant concern for device fabrication. 4H-SiC wafers with 12 µm thick epilayers implanted with Al ions at a concentration of 5 x 10¹⁶ cm^-3 using the Tandem Van de Graaff accelerator at Brookhaven National Laboratory across an energy range of 13.8 to 65.7 MeV and at different temperatures: room temperature, 300 °C, and 600 °C were analyzed by reciprocal space mapping measurements. Implanted layers exhibited tensile strains that decreased with increasing implantation temperature indicating dynamic annealing effect reduces lattice damage. On annealing at 1700 °C, for recovery of the lattice strain, RSM measurements show that the highest implantation temperatures have the lowest residual strains. In addition, the use of a Silicon Energy-Filter for Ion Implantation (EFII) for Al implantation in a single stage to the depth of 15µm is found to further reduce lattice strain compared to wafers implanted without EFII to the same doping concentration. This preliminary study will assist in optimizing the implantation and annealing conditions for the development of superjunction devices.

By email View Pdf

You have full access to the following eBook

Read eBook

Info:

Periodical:

Solid State Phenomena (Volume 375)

Pages:

29-34

DOI:

https://doi.org/10.4028/p-99wz0T

Citation:

Cite this paper

Online since:

September 2025

Authors:

Ze Yu Chen*, Qian Yu Cheng, Shan Shan Hu, Balaji Raghothamachar, Charles Carlson, Dannie Steski, Thomas Kubley, Florian Krippendorf, Michael Rüb, Robert Koch, Reza Ghandi, Stacey Kennerly, Michael Dudley

Keywords:

4H-SiC, Heated High Energy Ion Implantation, HRXRD, Lattice Strain

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] A.A. Lebedev and V.E. Chelnokov, Semiconductors 33, 999–1001 (1999).

Google Scholar

[2] T. Liu, S. Hu, J. Wang, G. Guo, J. Luo, Y. Wang, J. Guo and Y. Huo, IEEE Access, 7 145118-145123. (2019)

DOI: 10.1109/access.2019.2944991

Google Scholar

[3] P. Thieberger, C. Carlson, D. Steski, R. Ghandi, A. Bolotnikov, D. Lilienfeld, P. Losee, Nucl. Instrum. Methods Phys. Res. B: Beam Interact. Mater. At. 442 36-40. (2019)

DOI: 10.1016/j.nimb.2019.01.016

Google Scholar

[4] R. Ghandi, A. Bolotnikov, S. Kennerly, C. Hitchcock, P.-m. Tang, T.P. Chow, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), IEEE, 126-129 (2020)

DOI: 10.1109/ispsd46842.2020.9170171

Google Scholar

[5] Z. Chen, Y. Liu, H. Peng, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley, R. Ghandi, S. Kennerly and P. Thieberger, ECS J. Solid State Sci. Technol. 11 065003 (2022)

DOI: 10.1149/2162-8777/ac7351

Google Scholar

[6] A. Yu. Kuznetsov, J. Wong-Leung, A. Hallen, C. Jagadish, and B. G. Svensson, Journal of Applied Physics 94, 7112 (2003)

Google Scholar

[7] S. Mancini, S. Jang, Z. Chen, D. Kim, Y. Liu, B. Raghothamachar, M. Kang, A. Agarwal, N. Mahadik, R. Stahlbush, M. Dudley, W. Sung, proceeding of 2022 IEEE International Reliability Physics Symposium (IRPS) (2022)

DOI: 10.1109/irps48227.2022.9764538

Google Scholar

[8] Z. Chen, H. Peng, Y. Liu, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley, R. Ghandi, S. Kennerly and P. Thieberger, Materials Science Forum 1062, 361-365 (2022)

DOI: 10.4028/p-m7sftq

Google Scholar

[9] Z. Chen, Y. Liu, Q. Cheng, S. Hu, B. Raghothamachar, R. Ghandi, S. Kennerly, C. Carlson, D. Steski, M. Dudley, Defect and Diffusion Forum 434, 87-92. (2024)

DOI: 10.4028/p-hody82

Google Scholar

[10] T. Steinbach , C. Csato, F. Krippendordf, F. Letzkus, M. Rüb, J.N. Burghartz, Microelectronic Engineering 222 (2020) 111203

DOI: 10.1016/j.mee.2019.111203

Google Scholar

[11] Z. Chen, Y. Liu, Q. Cheng, S. Hu, B. Raghothamachar and M. Dudley, Journal of Crystal Growth 627, 127535(2024)

Google Scholar