Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate

Abstract:

This paper details the defect inspection and characterization of the 200 mm 4H-SiC (0001) n-type substrate pre-and post-epitaxy. The findings in this paper focus on the characterization of the micropipes (MPs) present in the 200 mm SiC substrate. Following epitaxy, the observations include how the micropipes were propagated from the substrate to the epilayer. This study explores the closing of micropipes during epitaxial growth. As a part of our efforts to better understand the crystal structure and elemental composition of the micropipes in the epilayer, we have conducted SAED and EDX experiments. To the best of our knowledge, it is the first report to demonstrate the region near the micropipe sidewall surface, is remarkably Si-rich (~ 9:1) than in the region towards the bulk (~1:1) after SiC epitaxial growth.

• Periodical: Solid State Phenomena (Volume 375)
• Pages: 7-11
• DOI: https://doi.org/10.4028/p-d3Ksws
• Online since: September 2025
• Authors: An Min Amanda Lee, Xin Yi Li, Qin Gui Roth Voo, Shiv Kumar*, Eng Soon Tok, Umesh Chand, Lakshmi Kanta Bera, Hema Lata Rao Maddi, Surasit Chung, Francois Hébert, Navab Singh, Yee Chia Yeo
• Keywords: 4H-SiC, Defect Inspection, Homoepitaxial Growth, Micropipe

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