Preface
Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiCTM Engineered Substrates for High Volume Manufacturing
p.1
p.1
Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
p.7
p.7
Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
p.13
p.13
Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
p.21
p.21
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
p.29
p.29
Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
p.35
p.35
Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
p.43
p.43
Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
p.49
p.49
Preface
Abstract:
You have full access to the following eBook
