Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates

Hidetsugu Uchida; Motoki Kobayashi; Naoki Hatta; Seiji Ishikawa; Yuta Higashi; Hiroshi Sezaki; Shinsuke Harada; Kazutoshi Kojima

doi:10.4028/p-7L8fIz

Paper Titles

Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiC^TM Engineered Substrates for High Volume Manufacturing
p.1

Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
p.7

Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
p.13

Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
p.21

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
p.29

Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
p.35

Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
p.43

Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
p.49

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Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates

Abstract:

In this study, we investigated the generation of trap centers through hydrogen implantation to understand its role in the suppression of forward bias degradation in 4H-silicon carbide (4H-SiC) bonded substrates. During the production of bonded substrates, hydrogen implantation is used for layer splitting. Transmission electron microscopy (TEM) observations revealed that the basal plane dislocation (BPD) in the bonded substrate did not extend into the Shockley-type stacking fault (SSF) and remained stable in the transferred layer below the epitaxial interface even under high forward current stress. Additionally, carrier lifetime, measured using microwave photoconductivity decay (μ-PCD), was considerably reduced by hydrogen implantation. Annealing at 1700°C reduced the implanted hydrogen to levels below the detection limit of secondary ion mass spectrometry (SIMS), yet the carrier lifetime remained short. Deep level transient spectroscopy (DLTS) revealed that, after annealing at 1700°C following hydrogen implantation, the concentration of the Z_1/2 center increased by more than two orders of magnitude compared to pre-implantation levels. Trap centers, including the Z_1/2 center, are believed to help prevent forward bias degradation in the bonded substrates by inhibiting the expansion of SSFs in the transferred layer.

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