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In addition, the OWC device is the most advanced WEC in terms of quantity and duration in time of prototypes tested at sea.
Journal of Engineering Thermophysics, v.27 n.2 (2018) pp.1-18
Bejan, Shape and Structure: From Engineering to Nature.
Chakrabarti, Handbook of Offshore Engineering.
Norminton, Advanced Engineering Mathematics, John Wiley & Sons, USA, 10a ed., 2011

Abu Amr1,c 1School of Civil Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 NibongTebal, Penang, Malaysia. 2Solid Waste Management Cluster, Engineering Campus, Universiti Sains Malaysia asitinorfarhanazakaria@gmail.com, bcehamidi@eng.usm.my, csabuamr@hotmail.com Keywords: ozonation, zirconium, stabilized leachate, treatment, removal Abstract.
Forum Geookol. 15 (2005) 2
Manuel, Evaluation of fenton and ozone-based advanced oxidation processes as mature landfill leachate pre-treatments.
Journal science and engineering, 1 (2012) 1-7
Adlan, Optimization of stabilized leachate treatment using ozone/persulfate in the advanced oxidation process.

The research on quantitative Appraisal of the search engine is relatively less, mainly include: Yuehua Tao explored the use of Analytic Hierarchy Process to weights of each index by calculating according to the basic idea of the systems engineering.
Sometimes a problem as a retrieval formula can get satisfied search result. 3) Make Targeting Search through Rational Use of Advanced Search Features Accuracy and flexibility of advanced search are much better than the basic search of engines.
Advanced search functions provide the appropriate choice to meet search request.
The advanced search function should be used to improve the degree of specificity of contraction seized.
Computer Engineering & Science Vol. 23(2001), p. 25-27 [5] Y.H.

., 111 Nishiyokote, Takasaki, JAPAN 2 School of Electrical and Computer Engineering and Birck Nanotechnology Center Purdue University, West Lafayette, IN USA a tamaki.tomohiro@renesas.com, bgwalden@purdue.edu, csui@purdue.edu, dcooperj@purdue.edu Keywords: 4H-SiC, MOSFET, IGBT, switching, simulation, device comparison Abstract.
Introduction Advances in 4H-SiC material quality and MOS channel mobility have made it possible to fabricate DMOS structures on low-doped epilayers capable of blocking up to 20 kV.
Cooper, Materials Science Forum, 527-529, 1269 (2006)
Shur, Editors, Properties of Advanced Semiconductor Materials: Ga,, Al,, In,, B,, SiC, and SiGe, John Wiley and Sons, New York, (2001)
Thesis, School of Electrical and Computer Engineering, Purdue University (1997). 0 10 20 30 40 50 60 70 80 90 0 500 1000 1500 2000 2500 f (Hz) JC (A/cm 2 ) p-IGBT n-DMOSFET DECREASING BUFFER LAYER LIFETIME τA= 0.5, 0.1, 0.02 µs @27°°°°C 300 W/cm2 0 10 20 30 40 50 60 70 80 90 0 500 1000 1500 f (Hz) JC (A/cm 2 ) p-IGBT n-DMOSFET DECREASING BUFFER LAYER LIFETIME τA= 0.5, 0.1, 0.02 µs @27°°°°C 300 W/cm2

Advanced Engineering Materials, 2014. 16(6): p. 729-754
Advanced Engineering Materials, 2015. 17(6): p. 761-780
Advanced Engineering Materials, 2012. 14(7): p. 439-444
Advanced Engineering Materials, 2009. 11(5): p. 392-398
Advanced Engineering Materials, 2009. 11(7): p. 530-532

Effect of Sintering Additive and Pyrolysis Temperatures on Porous Silicon Carbide Chalermkwan Makornpan1, 2, a, Charusporn Mongkolkachit3, b, Suda Wanakitti3, c and Thanakorn Wasanapiarnpong1, 2, 4, d * 1Research Unit of Advanced Ceramics, Department of Materials Science, Faculty of Science, Chulalongkorn University, Wangmai, Patumwan, Bangkok, 10330, Thailand 2Center of Excellence on Petrochemical and Materials Technology, Chulalongkorn University, Wangmai, Patumwan, Bangkok, 10330, Thailand 3National Metal and Materials Technology Center (MTEC), National Science and Technology Development Agency (NSTDA), Khlong Luang, Pathum Thani 12120, Thailand 4 Local Materials Technology Development Center, Metallurgy and Materials Science Research Institute, Chulalongkorn University, Wangmai, Patumwan, Bangkok, 10330, Thailand ac.makornpan@gmail.com, bcharuspm@mtec.or.th, csudaw@mtec.or.th, dthanakorn.w@chula.ac.th* Keywords: Silicon Carbide, Pyrolysis, Rice Husk, In-situ Reaction
Acknowledgement The Authors would like to acknowledge Thailand Graduate Institute of Science and Technology (TGIST), Research Unit of Advanced Ceramics, Faculty of Science, Chulalongkorn University and Center of Excellence on Petrochemical and Materials Technology for facility and financial support.
Forum. 620-622 (2009) 773-776
Feeser, Formation of dense silicon carbide by liquid silicon infiltration of carbon with engineered structure, J.

Multi Screen Interactive Technology in SMART TV  Operating System QI NA1, a * 1 School of Information and Engineering, Communication University of China, Beijing 100024，China ahit_qina@163.com Keywords: Multiple-screen interaction, DLNA, Smart TV Operating System, NGB TVOS1.0.
PC, smart phones and advanced cameras can be regarded as DMS.
Developers can customize themselves, as if they meet the UPnP Forum's specifications
Moreover, CP can also subscribe to the event server for information in advance, just like the RSS subscription, to ensure that events CP interested in will be unicast timely and accurately

Shimizu3 1Department of Physics, Faculty of Science and Engineering, Konan University, 8-9-1 Okamoto, Higashi Nada-ku, Kobe, Hyogo 658-8501, Japan 2Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan 3National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan akobori@konan-u.ac.jp Keywords: Magneto-transport properties, hole self-doping, ferromagnetic metal, LaMnO3, thin film, metal organic decomposition.
Mori, AIP ADVANCES, Vol. 8, (2018) p. 015101 [10] L.
Shimizu, Material Science Forum.

In the years that followed they were thoroughly studied, appearing both new families of alloys and new methods of processing them, advancing from the thickness of several microns to obtain them in bulk form [9].
Bae, Pulsed Nd:YAG laser welding of Cu54Ni6Zr22Ti18 bulk metallic glass, Materials Science and Engineering A, 2007, 449-451, pp. 872–875
Zhu, Y.Chen, Ultrasonic Welding of Fe78Si9B13 Metallic Glass, Materials Science Forum, Vols 809-810, 2015, pp. 348-353
Norfolk, Very high power ultrasonic additive manufacturing (VHP UAM) for advanced materials, in ‘Solid freeform fabrication symposium’, Austin, Texas, 2010

Influence of Phases Stability on the Hydrogen Diffusion Coefficient in Ti-6Al-4V Mohammed Kasim Mohsun1,a 1University of Technology, Production Engineering & Metallurgy, Baghdad, Iraq amohammed_kasim_78@yahoo.co.uk Keywords: Hydrogen diffusion coefficient, thermo-hydrogen treatment, Ti-6Al-4V, explicit finite difference method, Matano technique.
This advanced heat treatment requires reliable data about the hydrogen diffusion coefficient (DH) for understanding diffusion kinetics and its effect on the mechanical behavior of the resulted phases.
THT is an advanced heat treatment requires the comprehension of the kinetic mechanism of the resulted phases, as well as, the evaluation of hydrogen uptake and diffusion in the Ti-6Al-4V alloy and their influence on the mechanical attributes [7,8].
S. dos Santos: Defect and Diffusion Forum Vol. 237 (2005), p. 340-345
Yexin: Rare Metal Materials and Engineering Vol. 44 (2015), p 553-556