On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs

Abstract:

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We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional parameter space defined by blocking voltage, switching frequency, and current density. We determine the maximum current density each device can carry at a given switching frequency, such that the total power dissipation is 300 W/cm2. The IGBT current depends strongly on lifetime in the NPT buffer layer, and only weakly on lifetime in the drift layer. The MOSFET current is essentially independent of frequency.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1143-1146

DOI:

10.4028/www.scientific.net/MSF.600-603.1143

Citation:

T. Tamaki et al., "On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs ", Materials Science Forum, Vols. 600-603, pp. 1143-1146, 2009

Online since:

September 2008

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$35.00

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