On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs

Tomohiro Tamaki; Ginger G. Walden; Yang Sui; James A. Cooper

doi:10.4028/www.scientific.net/MSF.600-603.1143

Paper Titles

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
p.1127

950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
p.1131

Evaluation of 4H–SiC DMOSFETs for High–Power Electronics Applications
p.1135

Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion
p.1139

On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs
p.1143

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
p.1147

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
p.1151

1600 V, 5.1 mΩ●cm² 4H-SiC BJT with a High Current Gain of β=70
p.1155

4H-SiC Bipolar Junction Transistors with a Current Gain of 108
p.1159

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On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs

Abstract:

We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional parameter space defined by blocking voltage, switching frequency, and current density. We determine the maximum current density each device can carry at a given switching frequency, such that the total power dissipation is 300 W/cm2. The IGBT current depends strongly on lifetime in the NPT buffer layer, and only weakly on lifetime in the drift layer. The MOSFET current is essentially independent of frequency.