Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion

Ginger G. Walden; Ty McNutt; Marc Sherwin; Stephen Van Campen; Ranbir Singh; Rob Howell

doi:10.4028/www.scientific.net/MSF.600-603.1139

Paper Titles

Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
p.1123

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
p.1127

950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
p.1131

Evaluation of 4H–SiC DMOSFETs for High–Power Electronics Applications
p.1135

Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion
p.1139

On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs
p.1143

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
p.1147

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
p.1151

1600 V, 5.1 mΩ●cm² 4H-SiC BJT with a High Current Gain of β=70
p.1155

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs...

Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion

Abstract:

For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performance and power dissipation of silicon carbide (SiC) n-channel IGBTs and MOSFETs are evaluated using numerical simulations software over an extended current range to determine the best device suitable for 10 kV applications. Each device is also optimized for minimal forward voltage drop in the on-state.