Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion

Abstract:

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For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performance and power dissipation of silicon carbide (SiC) n-channel IGBTs and MOSFETs are evaluated using numerical simulations software over an extended current range to determine the best device suitable for 10 kV applications. Each device is also optimized for minimal forward voltage drop in the on-state.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1139-1142

DOI:

10.4028/www.scientific.net/MSF.600-603.1139

Citation:

G. G. Walden et al., "Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion", Materials Science Forum, Vols. 600-603, pp. 1139-1142, 2009

Online since:

September 2008

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Price:

$35.00

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