Silicon Carbide and Related Materials 2007
Paper Title Page
Abstract: The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed...
Abstract: Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero...
Abstract: We carried out investigations to elucidate the reasons for polytype changes in 4H. The aim was to sustain polytype stability throughout the...
Abstract: Silicon carbide single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on...
Abstract: We present p-type doping of bulk SiC crystals by the modified physical vapor transport (M-PVT) technique using TMA (Tri-Methyl-Aluminum)....
Abstract: Results on bulk growth of SiC crystals along rhombohedral [01-1n] directions are presented. 6H- and 4H-crystals were grown on rhombohedral...