Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum

Philip Hens; Ulrike Künecke; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.600-603.19

Paper Titles

Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
p.3

100 mm 4HN-SiC Wafers with Zero Micropipe Density
p.7

Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT
p.11

Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions
p.15

Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
p.19

Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
p.23

Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
p.27

Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals
p.31

Status of Large Diameter SiC Single Crystals at II-VI
p.35

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Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum

Abstract:

We present p-type doping of bulk SiC crystals by the modified physical vapor transport (M-PVT) technique using TMA (Tri-Methyl-Aluminum). Using TMA as a dopant precursor allows a quite well defined crystal growth process control. The issue of improvement of conductivity (reduction of substrate resistivity) by reduction of unintentional acceptor compensation by nitrogen is addressed. It is shown that a decrease of compensation from approx. 3%...10% to approx. 0.5%...2.5% leads to a charge carrier mobility and, hence, conductivity increase of about factor two.