Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
We present p-type doping of bulk SiC crystals by the modified physical vapor transport (M-PVT) technique using TMA (Tri-Methyl-Aluminum). Using TMA as a dopant precursor allows a quite well defined crystal growth process control. The issue of improvement of conductivity (reduction of substrate resistivity) by reduction of unintentional acceptor compensation by nitrogen is addressed. It is shown that a decrease of compensation from approx. 3%...10% to approx. 0.5%...2.5% leads to a charge carrier mobility and, hence, conductivity increase of about factor two.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
P. Hens et al., "Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum", Materials Science Forum, Vols. 600-603, pp. 19-22, 2009