Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities

Abstract:

Article Preview

The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

3-6

DOI:

10.4028/www.scientific.net/MSF.600-603.3

Citation:

M. Nakabayashi et al., "Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities ", Materials Science Forum, Vols. 600-603, pp. 3-6, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.