Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions

Emil Tymicki; Krzysztof Grasza; Władysław Hofman; Ryszard Diduszko; Rafał Bożek

doi:10.4028/www.scientific.net/MSF.600-603.15

Paper Titles

Overview

Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
p.3

100 mm 4HN-SiC Wafers with Zero Micropipe Density
p.7

Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT
p.11

Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions
p.15

Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
p.19

Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
p.23

Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
p.27

Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals
p.31

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Growth of 6H-SiC Single Crystals under...

Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions

Abstract:

Silicon carbide single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on the Si-face (0001) of 6H-SiC seeds. The growth proceeded under quasi-equilibrium conditions with the growth rate in the range 0.05-0.2 mm/h, that was extremely low as compared to used in standard growth processes. The shape and morphology of the crystallization fronts have been studied. Moreover, defects in crystals and wafers cut from these crystals were examined by optical and atomic force microscopy combined with KOH etching and X-Ray diffraction.