Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT

Erwin Schmitt; Thomas L. Straubinger; Michael Rasp; Michael Vogel; Andreas  Wohlfart

doi:10.4028/www.scientific.net/MSF.600-603.11

Paper Titles

Preface

Overview

Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
p.3

100 mm 4HN-SiC Wafers with Zero Micropipe Density
p.7

Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT
p.11

Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions
p.15

Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
p.19

Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
p.23

Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
p.27

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Investigations on Polytype Stability and...

Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT

Abstract:

We carried out investigations to elucidate the reasons for polytype changes in 4H. The aim was to sustain polytype stability throughout the entire process. The investigations were accompanied by studies on the formation of basal plane dislocations and their role as source for stacking faults. Several methods for the evaluation of material properties were applied to determine quality most precisely, e.g. KOH-defect-etching, optical microscopy, electron microscopy and X-ray-diffraction. We found out that several influences in growth conditions have to be controlled in a proper manner to achieve defect reduction. Based on these investigations we were able to improve our process and the crystal quality significantly. Best values for 3” 4H wafers show that EPD = 5x103 cm-2 , MPD < 0.1 cm-2 and FWHM-values < 15 arcsec can be achieved.

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Materials Science Forum (Volumes 600-603)

Pages:

11-14

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.11

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Online since:

September 2008

Authors:

Erwin Schmitt, Thomas L. Straubinger, Michael Rasp, Michael Vogel, Andreas Wohlfart

Keywords:

Basal Plane Dislocation (BPD), Polytype Stability, Stacking Fault, Sublimation Growth

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