100 mm 4HN-SiC Wafers with Zero Micropipe Density

Abstract:

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Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers. Combined techniques of KOH etching and cross-polarizer inspections were used to confirm the absence of micropipes. Crystal growth studies for 3-inch material with similar processes have demonstrated a 1c screw dislocation median density of 175 cm-2, compared to typical densities of 2x103 to 4x103 cm-2 in current production wafers. These values were obtained through optical scanning analyzer methods and verified by x-ray topography.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

7-10

DOI:

10.4028/www.scientific.net/MSF.600-603.7

Citation:

R.T. Leonard et al., "100 mm 4HN-SiC Wafers with Zero Micropipe Density", Materials Science Forum, Vols. 600-603, pp. 7-10, 2009

Online since:

September 2008

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Price:

$35.00

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