Status of Large Diameter SiC Single Crystals at II-VI

Abstract:

Article Preview

II-VI is developing large-diameter SiC crystals to be used as lattice-matched, high thermal conductivity substrates for new generation GaN-based and SiC-based semiconductor devices. Large-diameter 6H SiC single crystals are grown at II-VI using our Advanced PVT sublimation growth process. Stable SI properties are achieved by compensation with vanadium, which results in high and spatially uniform resistivity, on the order of 1011 Ohm-cm. The quality of the presently grown 100 mm 6H SI substrates has been dramatically improved [1], and they are free of edge defects. Micropipe density in the 100 mm 6H SI substrates ranges from 2 to 8 cm-2 and dislocation density from 3·104 to 6·104 cm-2. X-ray rocking curves measured on as-sawn 100 mm 6H wafers showed edge-to-edge lattice curvature () between 0.1° and 0.3° and FWHM of the rocking curve between 50 and 100 arc-seconds

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

35-38

DOI:

10.4028/www.scientific.net/MSF.600-603.35

Citation:

A. K. Gupta et al., "Status of Large Diameter SiC Single Crystals at II-VI", Materials Science Forum, Vols. 600-603, pp. 35-38, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.