Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer

J. Chen; S.C. Lien; Y.C. Shin; Zhe Chuan Feng; C.H. Kuan; J.H. Zhao; J.H. Zhao; Wei Jie Lu

doi:10.4028/www.scientific.net/MSF.600-603.39

Paper Titles

Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
p.23

Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
p.27

Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals
p.31

Status of Large Diameter SiC Single Crystals at II-VI
p.35

Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer
p.39

The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk
p.43

Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
p.47

Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
p.51

Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System
p.55

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Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer

Abstract:

The polytype structural variations of a set of SiC bulk wafers with different Nitrogen (N) doping levels, prepared by Physical Vapore Deposition (PVD), are studied. The initial growth conditions were used to produce 6H-polytype SiC, which has been approved for the undoped and lightly doped materials. However, when extreme high N-dopants were applied, the obtained wafer was found with 4H- and 15R-polytype features. Our experimental results of HR-TEM and Raman scattering have revealed clearly the polytype transformation, indicating that the inducement of N in the reactor leads to the polytype transformation of the resulted SiC crystal.