The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk

Abstract:

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An unusual contrast in SEM secondary electron imaging for PVT grown silicon carbide with vanadium doped was observed. An explanation in point of the compensation of different type of dopant was drawn. And the relationship between the doping properties of vanadium and orientation of SiC domains was investigated.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

43-46

DOI:

10.4028/www.scientific.net/MSF.600-603.43

Citation:

J. M. Hao et al., "The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk ", Materials Science Forum, Vols. 600-603, pp. 43-46, 2009

Online since:

September 2008

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Price:

$35.00

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