The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk
An unusual contrast in SEM secondary electron imaging for PVT grown silicon carbide with vanadium doped was observed. An explanation in point of the compensation of different type of dopant was drawn. And the relationship between the doping properties of vanadium and orientation of SiC domains was investigated.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
J. M. Hao et al., "The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk ", Materials Science Forum, Vols. 600-603, pp. 43-46, 2009