Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
p.27
p.27
Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals
p.31
p.31
Status of Large Diameter SiC Single Crystals at II-VI
p.35
p.35
Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer
p.39
p.39
The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk
p.43
p.43
Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
p.47
p.47
Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
p.51
p.51
Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System
p.55
p.55
Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
p.59
p.59
The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk
Abstract:
An unusual contrast in SEM secondary electron imaging for PVT grown silicon carbide with vanadium doped was observed. An explanation in point of the compensation of different type of dopant was drawn. And the relationship between the doping properties of vanadium and orientation of SiC domains was investigated.
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Periodical:
Materials Science Forum (Volumes 600-603)
Pages:
43-46
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Online since:
September 2008
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© 2009 Trans Tech Publications Ltd. All Rights Reserved
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