Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents

Ryo Tanaka; Kazuaki Seki; Satoshi Komiyama; Toru Ujihara; Yoshikazu Takeda

doi:10.4028/www.scientific.net/MSF.600-603.59

Paper Titles

The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk
p.43

Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
p.47

Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
p.51

Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System
p.55

Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
p.59

Stability Growth Condition for 3C-SiC Crystals by Solution Technique
p.63

Structural Characterization of CF-PVT Grown Bulk 3C-SiC
p.67

Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
p.71

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
p.77

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Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents

Abstract:

We investigated effects of Ti and Ge additions to Si solvent on the volume and the polytype of SiC precipitate in unseeded SiC solution growth. The Ti addition increased the amount of SiC precipitates. Compared to pure Si solvent, the amount of crystal grown in Si-30at%Ti at 1600 °C increased by 5 times. In addition, the Ti addition induced the precipitation of 6H-SiC. Further, the Ge addition to Si-Ti solvent promoted several polytype precipitations (4H and 6H). These results indicate the possibility of polytype control by solvent composition.