Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
We investigated effects of Ti and Ge additions to Si solvent on the volume and the polytype of SiC precipitate in unseeded SiC solution growth. The Ti addition increased the amount of SiC precipitates. Compared to pure Si solvent, the amount of crystal grown in Si-30at%Ti at 1600 °C increased by 5 times. In addition, the Ti addition induced the precipitation of 6H-SiC. Further, the Ge addition to Si-Ti solvent promoted several polytype precipitations (4H and 6H). These results indicate the possibility of polytype control by solvent composition.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
R. Tanaka et al., "Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents", Materials Science Forum, Vols. 600-603, pp. 59-62, 2009