SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Abstract:

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The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

77-82

DOI:

10.4028/www.scientific.net/MSF.600-603.77

Citation:

A. A. Burk et al., "SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices", Materials Science Forum, Vols. 600-603, pp. 77-82, 2009

Online since:

September 2008

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Price:

$35.00

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