SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Albert A. Burk; Michael  J. O'Loughlin; Joseph J. Sumakeris; C. Hallin; Elif Berkman; Vijay Balakrishna; Jonathan Young; Lara Garrett; Kenneth G. Irvine; Adrian R. Powell; Y. Khlebnikov; R.T. Leonard; C. Basceri; Brett A. Hull; Anant K. Agarwal

doi:10.4028/www.scientific.net/MSF.600-603.77

Paper Titles

Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
p.59

Stability Growth Condition for 3C-SiC Crystals by Solution Technique
p.63

Structural Characterization of CF-PVT Grown Bulk 3C-SiC
p.67

Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
p.71

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
p.77

Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
p.83

Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
p.89

Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
p.95

Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
p.99

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603SiC Epitaxial Growth on Multiple 100-mm Wafers and...

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Abstract:

The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.