SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
A. A. Burk et al., "SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices", Materials Science Forum, Vols. 600-603, pp. 77-82, 2009