Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates

Abstract:

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We have developed a horizontal hot-wall reactor for growing extremely uniform epilayers on 100-mm diameter SiC substrates using a novel supplemental reagent source. Doping and thickness variations of 2% and 1% s / mean, respectively, have been demonstrated. The typical defect density is 2 cm-2. We describe the growth cell in detail and discuss the development of the design and process to produce these very uniform epilayers.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

99-102

DOI:

10.4028/www.scientific.net/MSF.600-603.99

Citation:

J. J. Sumakeris et al., "Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates", Materials Science Forum, Vols. 600-603, pp. 99-102, 2009

Online since:

September 2008

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Price:

$35.00

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