Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
We have developed a horizontal hot-wall reactor for growing extremely uniform epilayers on 100-mm diameter SiC substrates using a novel supplemental reagent source. Doping and thickness variations of 2% and 1% s / mean, respectively, have been demonstrated. The typical defect density is 2 cm-2. We describe the growth cell in detail and discuss the development of the design and process to produce these very uniform epilayers.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
J. J. Sumakeris et al., "Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates", Materials Science Forum, Vols. 600-603, pp. 99-102, 2009