Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes

Christian Hecht; Bernd Thomas; René A. Stein; Peter Friedrichs

doi:10.4028/www.scientific.net/MSF.600-603.95

Paper Titles

Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
p.71

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
p.77

Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
p.83

Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
p.89

Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
p.95

Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
p.99

High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
p.103

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
p.107

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
p.111

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Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes

Abstract:

In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 7×3” or 6×100mm wafers per run in a new 100mm setup. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm and 7×3” runs will be shown. Results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3”, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.