Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Stefano Leone; Henrik Pedersen; Anne Henry; Olof Kordina; Erik Janzén

doi:10.4028/www.scientific.net/MSF.600-603.107

Paper Titles

Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
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Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
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Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
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High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
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Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
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Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
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Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
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Development of a Practical High-Rate CVD System
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SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
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Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Abstract:

The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20µm/h, thus about seven times higher than with standard precursors. It was also found that chlorine etches preferentially the 3C-SiC inclusions that tends to nucleate on Si-face on-axis substrates. Therefore the Cl/Si ratio is a fundamental process parameter to optimize.