Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Abstract:

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The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20µm/h, thus about seven times higher than with standard precursors. It was also found that chlorine etches preferentially the 3C-SiC inclusions that tends to nucleate on Si-face on-axis substrates. Therefore the Cl/Si ratio is a fundamental process parameter to optimize.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

107-110

DOI:

10.4028/www.scientific.net/MSF.600-603.107

Citation:

S. Leone et al., "Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD ", Materials Science Forum, Vols. 600-603, pp. 107-110, 2009

Online since:

September 2008

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Price:

$35.00

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