High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl

Abstract:

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Epitaxial growth of 3-in, 4° off-axis 4H SiC with addition of HCl has been presented. Good surface morphology with a low defect density has been obtained, even for epi thickness of 38 µm. Comprehensive characterization techniques conducted on the epi material obtained in this process have independently confirmed the high purity and low density of crystalline imperfections. Low temperature PL displays clear free exciton I77 recombination while no L1 line is discernable. DLTS measurements have confirmed a low concentration of Z1/2 and EH6/7 below or in the range of 1011 cm-3. Time resolved PL at room temperature performed on a 38 µm thick epi wafer gives long carrier lifetime in the range of 1.5 to above 5 µsec. PiN diodes with diode area up to 25 mm2 have demonstrated blocking voltages above 900V, with a max electric field of above 2.5 MV/cm.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

103-106

DOI:

10.4028/www.scientific.net/MSF.600-603.103

Citation:

J. Zhang et al., "High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl", Materials Science Forum, Vols. 600-603, pp. 103-106, 2009

Online since:

September 2008

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Price:

$35.00

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