High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl

Jie Zhang; Janice Mazzola; Swapna G. Sunkari; Gray Stewart; Paul B. Klein; Rachael M. Ward; E.R. Glaser; Kok Keong Lew; D. Kurt Gaskill; Igor Sankin; Volodymyr Bondarenko; David Null; David C. Sheridan; Michael S. Mazzola

doi:10.4028/www.scientific.net/MSF.600-603.103

Paper Titles

Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
p.83

Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
p.89

Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
p.95

Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
p.99

High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
p.103

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
p.107

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
p.111

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
p.115

Development of a Practical High-Rate CVD System
p.119

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603High Quality Epitaxial Growth on 4° Off-Axis 4H...

High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl

Abstract:

Epitaxial growth of 3-in, 4° off-axis 4H SiC with addition of HCl has been presented. Good surface morphology with a low defect density has been obtained, even for epi thickness of 38 µm. Comprehensive characterization techniques conducted on the epi material obtained in this process have independently confirmed the high purity and low density of crystalline imperfections. Low temperature PL displays clear free exciton I77 recombination while no L1 line is discernable. DLTS measurements have confirmed a low concentration of Z1/2 and EH6/7 below or in the range of 1011 cm-3. Time resolved PL at room temperature performed on a 38 µm thick epi wafer gives long carrier lifetime in the range of 1.5 to above 5 µsec. PiN diodes with diode area up to 25 mm2 have demonstrated blocking voltages above 900V, with a max electric field of above 2.5 MV/cm.