Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling

Michel Pons; Shin Ichi Nishizawa; Peter J. Wellmann; Elisabeth Blanquet; Didier Chaussende; Jean Marc Dedulle; Roland Madar

doi:10.4028/www.scientific.net/MSF.600-603.83

Paper Titles

Stability Growth Condition for 3C-SiC Crystals by Solution Technique
p.63

Structural Characterization of CF-PVT Grown Bulk 3C-SiC
p.67

Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
p.71

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
p.77

Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
p.83

Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
p.89

Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
p.95

Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
p.99

High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
p.103

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Silicon Carbide Growth:C/Si Ratio Evaluation and...

Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling

Abstract:

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.