Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
We have investigated through birefringence microscopy, a set of 3C-SiC crystals grown with the CF-PVT process, starting from different seeds and under different growth conditions. Through self nucleation experiments, the stable growth of very high quality 3C-SiC crystals at high temperature (2100°C) and at high rate (roughly 0.2 mm/h) is demonstrated. The possibility to develop bulk growth of 3C-SiC crystals is discussed.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
D. Chaussende et al., "Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy", Materials Science Forum, Vols. 600-603, pp. 71-74, 2009