Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy

Didier Chaussende; Frédéric Mercier; Roland Madar; Michel Pons

doi:10.4028/www.scientific.net/MSF.600-603.71

Paper Titles

Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System
p.55

Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
p.59

Stability Growth Condition for 3C-SiC Crystals by Solution Technique
p.63

Structural Characterization of CF-PVT Grown Bulk 3C-SiC
p.67

Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
p.71

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
p.77

Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
p.83

Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
p.89

Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
p.95

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Comparative Study of Differently Grown 3C-SiC...

Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy

Abstract:

We have investigated through birefringence microscopy, a set of 3C-SiC crystals grown with the CF-PVT process, starting from different seeds and under different growth conditions. Through self nucleation experiments, the stable growth of very high quality 3C-SiC crystals at high temperature (2100°C) and at high rate (roughly 0.2 mm/h) is demonstrated. The possibility to develop bulk growth of 3C-SiC crystals is discussed.