Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System

Mamoru  Imade; Takashi  Ogura; Masahiro Uemura; Fumio Kawamura; Masashi  Yoshimura; Yasuo  Kitaoka; Yusuke  Mori; Takatomo Sasaki; Masanobu Yamazaki; Shigekazu Suwabe

doi:10.4028/www.scientific.net/MSF.600-603.55

Paper Titles

Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer
p.39

The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk
p.43

Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
p.47

Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
p.51

Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System
p.55

Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
p.59

Stability Growth Condition for 3C-SiC Crystals by Solution Technique
p.63

Structural Characterization of CF-PVT Grown Bulk 3C-SiC
p.67

Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
p.71

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Growth of 2H-SiC Single Crystals in a C-Li-Si...

Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System

Abstract:

We have achieved the first successful growth of 2H-SiC single crystals using the C-Li-Si melt system. Li-Si melt, whose melting point is lower than 1000 oC, was chosen because the 2H-SiC polytype is more stable at lower temperatures than other polytypes such as 3C-, 4H-, and 6H-SiC. Many hexagonal-shaped crystals of approximately 100 m in diameter were observed via a scanning electron microscope (SEM). A high resolution transmission electron microscope (HR-TEM) lattice image of the grown crystals showed a periodical structure with A-B stacking along the <0001> direction. These results indicated that the Li-based flux was useful for growing bulk 2H-SiC single crystals.