Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System

Abstract:

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We have achieved the first successful growth of 2H-SiC single crystals using the C-Li-Si melt system. Li-Si melt, whose melting point is lower than 1000 oC, was chosen because the 2H-SiC polytype is more stable at lower temperatures than other polytypes such as 3C-, 4H-, and 6H-SiC. Many hexagonal-shaped crystals of approximately 100 m in diameter were observed via a scanning electron microscope (SEM). A high resolution transmission electron microscope (HR-TEM) lattice image of the grown crystals showed a periodical structure with A-B stacking along the <0001> direction. These results indicated that the Li-based flux was useful for growing bulk 2H-SiC single crystals.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

55-58

DOI:

10.4028/www.scientific.net/MSF.600-603.55

Citation:

M. Imade et al., "Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System", Materials Science Forum, Vols. 600-603, pp. 55-58, 2009

Online since:

September 2008

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Price:

$35.00

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