Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane

Yuri Makarov; R.A. Talalaev; A.N. Vorob'ev; Mark S. Ramm; Maxim V. Bogdanov

doi:10.4028/www.scientific.net/MSF.600-603.51

Paper Titles

Status of Large Diameter SiC Single Crystals at II-VI
p.35

Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer
p.39

The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk
p.43

Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
p.47

Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
p.51

Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System
p.55

Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
p.59

Stability Growth Condition for 3C-SiC Crystals by Solution Technique
p.63

Structural Characterization of CF-PVT Grown Bulk 3C-SiC
p.67

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Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane

Abstract:

This work focuses on computational analysis of SiC High Temperature Chemical Vapor Deposition (HTCVD) from silicon tetrachloride (SiCl4) and propane (C3H8) precursors supplied separately and diluted by argon and hydrogen, respectively. It is aimed at verification of the technological parameters providing complete precursor decomposition in the growth chamber, the optimal gas composition for SiC growth, and the required silicon-to-carbon ratio in the wafer region, as well as suppression of parasitic deposits at the reactor walls and inlet unit via the optimization of the reactor geometry and temperature distributions. As a result, a high growth rate and maximal yield are expected to be achieved due to minimal precursor losses.