Structural Characterization of CF-PVT Grown Bulk 3C-SiC

Abstract:

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The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

67-70

DOI:

10.4028/www.scientific.net/MSF.600-603.67

Citation:

A. Mantzari et al., "Structural Characterization of CF-PVT Grown Bulk 3C-SiC ", Materials Science Forum, Vols. 600-603, pp. 67-70, 2009

Online since:

September 2008

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Price:

$35.00

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