Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

Henrik Pedersen; Stefano Leone; Anne Henry; Franziska Christine Beyer; Vanya Darakchieva; Erik Janzén

doi:10.4028/www.scientific.net/MSF.600-603.115

Paper Titles

Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
p.99

High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
p.103

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
p.107

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
p.111

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
p.115

Development of a Practical High-Rate CVD System
p.119

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
p.123

Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
p.127

Multi-Level Simulation Study of Crystal Growth and Defect Formation Processes in SiC
p.131

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Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

Abstract:

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.