Development of a Practical High-Rate CVD System

Abstract:

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We have developed a new chemical vapor deposition (CVD) system that is capable of a high growth rate of over 100 µm/h with good uniformities of thickness and carrier concentration. In this CVD system, the process gases contribute efficiently to epitaxial growth. In a demonstration of the abilities of the CVD system, we achieved an average growth rate of 140 µm/h, a thickness uniformity of 3.9%, and a carrier concentration uniformity of 8.9% in a 2-inch wafer, without degradation of the crystallinity.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

119-122

DOI:

10.4028/www.scientific.net/MSF.600-603.119

Citation:

Y. Ishida et al., "Development of a Practical High-Rate CVD System", Materials Science Forum, Vols. 600-603, pp. 119-122, 2009

Online since:

September 2008

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Price:

$35.00

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