Development of a Practical High-Rate CVD System

Yuuki Ishida; Tetsuo Takahashi; Hajime Okumura; Kazuo Arai; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.600-603.119

Paper Titles

High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
p.103

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
p.107

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
p.111

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
p.115

Development of a Practical High-Rate CVD System
p.119

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
p.123

Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
p.127

Multi-Level Simulation Study of Crystal Growth and Defect Formation Processes in SiC
p.131

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC
p.135

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Development of a Practical High-Rate CVD System

Development of a Practical High-Rate CVD System

Abstract:

We have developed a new chemical vapor deposition (CVD) system that is capable of a high growth rate of over 100 µm/h with good uniformities of thickness and carrier concentration. In this CVD system, the process gases contribute efficiently to epitaxial growth. In a demonstration of the abilities of the CVD system, we achieved an average growth rate of 140 µm/h, a thickness uniformity of 3.9%, and a carrier concentration uniformity of 8.9% in a 2-inch wafer, without degradation of the crystallinity.