Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Christine Beyer, Vanya Darakchieva, Erik Janzén

Abstract: The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor,...

Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida

Abstract: We have developed a new chemical vapor deposition (CVD) system that is capable of a high growth rate of over 100 µm/h with good uniformities...

Authors: Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, G. Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa

Abstract: The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon...

Authors: Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via

Abstract: A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor;...

Authors: Hiromitsu Takaba, Ai Sagawa, Miki Sato, Seika Ouchi, Yuko Yoshida, Yukie Hayashi, Emi Sato, Kenji Inaba, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Momoj Kubo, Carlos A. Del Carpio, Yasuo Kito, Emi Makino, Norikazu Hosokawa, Jun Hasegawa, Shoichi Onda, Akira Miyamoto

Abstract: The mechanism of layer growth as well as defect formation in the SiC crystal is fundamentally important to derive its appropriate...

Authors: Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via

Abstract: A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the...

Authors: Amitesh Shrivastava, Peter G. Muzykov, B. Pearman, S. Michael Angel, Tangali S. Sudarshan

Abstract: Triangular defects and inverted pyramid type defects formed during homoepitaxial growth on 4H-SiC Si face, 4° off-cut towards [11-20]...

Authors: Birgit Kallinger, Bernd Thomas, Jochen Friedrich

Abstract: Basal Plane Dislocations (BPD) in SiC are thought to cause degradation of bipolar devices as they can trigger the formation and expansion of...

Authors: Guo Sheng Sun, Yong Mei Zhao, Liang Wang, Lei Wang, Wan Shun Zhao, Xing Fang Liu, Gang Ji, Yi Ping Zeng

Abstract: The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or...

Authors: Han Seok Seo, Ho Geun Song, Jeong Hyun Moon, Jeong Hyuk Yim, Myeong Sook Oh, Jong Ho Lee, Yu Jin Choi, Hyeong Joon Kim

Abstract: Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor...


Showing 31 to 40 of 330 Paper Titles