Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
Triangular defects and inverted pyramid type defects formed during homoepitaxial growth on 4H-SiC Si face, 4° off-cut towards [11-20] direction have been investigated. Growth parameters responsible for triangular defect formation were identified and optimized for its reduction in this study. It was found that although the high temperature reduces the density of inverted pyramid type defects, it is not the only remedy for reducing their density and cleanliness of susceptor along with the initial growth condition plays a major role in the formation of these defects.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
A. Shrivastava et al., "Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD", Materials Science Forum, Vols. 600-603, pp. 139-142, 2009