Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD

Amitesh Shrivastava; Peter G. Muzykov; B. Pearman; S. Michael Angel; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.600-603.139

Paper Titles

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
p.123

Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
p.127

Multi-Level Simulation Study of Crystal Growth and Defect Formation Processes in SiC
p.131

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC
p.135

Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
p.139

Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
p.143

In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
p.147

Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
p.151

Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
p.155

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Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD

Abstract:

Triangular defects and inverted pyramid type defects formed during homoepitaxial growth on 4H-SiC Si face, 4° off-cut towards [11-20] direction have been investigated. Growth parameters responsible for triangular defect formation were identified and optimized for its reduction in this study. It was found that although the high temperature reduces the density of inverted pyramid type defects, it is not the only remedy for reducing their density and cleanliness of susceptor along with the initial growth condition plays a major role in the formation of these defects.