Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM

Han Seok Seo; Ho Geun  Song; Jeong Hyun Moon; Jeong Hyuk Yim; Myeong Sook Oh; Jong Ho Lee; Yu Jin Choi; Hyeong Joon Kim

doi:10.4028/www.scientific.net/MSF.600-603.151

Paper Titles

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC
p.135

Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
p.139

Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
p.143

In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
p.147

Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
p.151

Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
p.155

Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC
p.159

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method
p.163

Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
p.167

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Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM

Abstract:

Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor was investigated. The growth rate of 4H-SiC was investigated as a function of the growth temperature and source flow rate. The FWHM values of epilayers as the growth temperature and source flow rate also investigated. The growth rate of 4H-SiC epilayer grown by hot-wall CVD was 3.0 μm/h and the background doping level of 4H-SiC epilayer was mid 1015/cm3.