Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM

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Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor was investigated. The growth rate of 4H-SiC was investigated as a function of the growth temperature and source flow rate. The FWHM values of epilayers as the growth temperature and source flow rate also investigated. The growth rate of 4H-SiC epilayer grown by hot-wall CVD was 3.0 μm/h and the background doping level of 4H-SiC epilayer was mid 1015/cm3.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

151-154

DOI:

10.4028/www.scientific.net/MSF.600-603.151

Citation:

H. S. Seo et al., "Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM", Materials Science Forum, Vols. 600-603, pp. 151-154, 2009

Online since:

September 2008

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$35.00

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