Micropipe Dissociation through Thick n+ Buffer Layer Growth

Mike F. MacMillan; Edward Sanchez; Michael Dudley; Yi Chen; Mark J. Loboda

doi:10.4028/www.scientific.net/MSF.600-603.167

Paper Titles

Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
p.151

Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
p.155

Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC
p.159

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method
p.163

Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
p.167

Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region
p.171

In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
p.175

Solution Growth of Off-Axis 4H-SiC for Power Device Application
p.179

Epitaxial TaC Films for the Selective Area Growth of SiC
p.183

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Micropipe Dissociation through Thick n⁺ Buffer Layer Growth

Abstract:

Thick (> 25 µm) 4H n+ epitaxial layer growth was performed on 4H n+ substrates utilizing chlorine containing etch chemistries in a hot wall CVD system. Optimization of the n+ epitaxial layer growth was achieved by varying C/Si ratio and N2 flow. Desired epitaxial layers have doping levels > 5x1018 cm-3, epitaxial surface roughness <10 nm on a 20x20 µm area and overall micropipe density reduction. To confirm the conversion of micropipes into closed core screw dislocations, microscopic examination of the epitaxial and wafer surfaces was carried out after KOH etching. Grazing incidence x-ray topography (XRT) as well as cross sectional XRT and microscopy were also performed. The cross sectional evaluation showed that the dissociation of the micropipes occurs very close to the epitaxy/wafer interface.