Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers

Wlodek Strupiński; Kinga Kościewicz; Jan Weyher; Andrzej Roman Olszyna

doi:10.4028/www.scientific.net/MSF.600-603.155

Paper Titles

Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
p.139

Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
p.143

In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
p.147

Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
p.151

Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
p.155

Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC
p.159

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method
p.163

Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
p.167

Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region
p.171

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Effect of Substrates Thermal Etching on CVD Growth...

Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers

Abstract:

The influence of in situ etching of Si-face n-4H-SiC wafers in H2 and propane on the surface morphology of the grown epi-layers were examined using differential interference contrast (DIC) optical microscopy and atomic force microscope (AFM). Two defect-selective etching techniques were applied in order to reveal the type and spatial distribution of defects in the substrates and epi-layers. It was found that for the flow applied in this experiment propane plays a significant role for the etching process. Depending on temperature and etching time we obtained completely different picture of substrate surface morphology. The propane etching was verified as a tool for substrate surface improvement.