Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers

Abstract:

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The influence of in situ etching of Si-face n-4H-SiC wafers in H2 and propane on the surface morphology of the grown epi-layers were examined using differential interference contrast (DIC) optical microscopy and atomic force microscope (AFM). Two defect-selective etching techniques were applied in order to reveal the type and spatial distribution of defects in the substrates and epi-layers. It was found that for the flow applied in this experiment propane plays a significant role for the etching process. Depending on temperature and etching time we obtained completely different picture of substrate surface morphology. The propane etching was verified as a tool for substrate surface improvement.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

155-158

DOI:

10.4028/www.scientific.net/MSF.600-603.155

Citation:

W. Strupiński et al., "Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers", Materials Science Forum, Vols. 600-603, pp. 155-158, 2009

Online since:

September 2008

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$35.00

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