Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

Hrishikesh Das; Bharat Krishnan; Galyna Melnychuk; Yaroslav Koshka

doi:10.4028/www.scientific.net/MSF.600-603.163

Paper Titles

In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
p.147

Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
p.151

Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers
p.155

Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC
p.159

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method
p.163

Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
p.167

Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region
p.171

In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
p.175

Solution Growth of Off-Axis 4H-SiC for Power Device Application
p.179

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Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

Abstract:

In this work, the local-loading effect and its influence on the growth rate enhancement and the growth rate non-homogeneity is investigated during the halo-carbon low-temperature selective epitaxial growth (LTSEG) using an SiO2 mask. The average growth rate during the LTSEG can be more than three-times higher than in blanket epitaxy at the same growth conditions. Both the size of the LTSEG seed windows and the surrounding area covered with the mask determine the growth rate non-homogeneity. A model for predicting the growth rate distribution is suggested.