Solution Growth of Off-Axis 4H-SiC for Power Device Application

Abstract:

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Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

179-182

DOI:

10.4028/www.scientific.net/MSF.600-603.179

Citation:

R. Hattori et al., "Solution Growth of Off-Axis 4H-SiC for Power Device Application", Materials Science Forum, Vols. 600-603, pp. 179-182, 2009

Online since:

September 2008

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Price:

$35.00

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