In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC

Adolf Schöner; Naohiro Sugiyama; Yuuichi Takeuchi; Rajesh Kumar Malhan

doi:10.4028/www.scientific.net/MSF.600-603.175

Paper Titles

Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC
p.159

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method
p.163

Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
p.167

Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region
p.171

In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
p.175

Solution Growth of Off-Axis 4H-SiC for Power Device Application
p.179

Epitaxial TaC Films for the Selective Area Growth of SiC
p.183

Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N₂-He Atmosphere
p.187

Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique
p.191

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In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC

Abstract:

The in-situ doping of aluminum and nitrogen in migration enhanced embedded epitaxy (ME3) is investigated with the aim to apply it to the realization and fabrication of all-epitaxial, normally-off 4H-SiC JFET devices. This ME3 process consists of the epitaxial growth of an n-doped channel and a highly p-doped top gate in narrow trenches. We found that the nitrogen doping in the n-channel (a-face) is a factor 1.5 higher than layers grown with the same process on Si-face wafers. Due to the low C/Si ratio and the low silane flow rate used in the ME3 process, the growth of the p-doped top gate needs high flow rates of the aluminum precursor trimethylaluminum for several hours, which contaminates the CVD reactor and causes aluminum memory effects. These aluminum memory effects can be reduced by an extra high temperature bake-out run.