Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique

Takashi Tanaka; Nobuyoshi Yashiro; Kazuhiko Kusunoki; Kazuhito Kamei; Akihiro Yauchi

doi:10.4028/www.scientific.net/MSF.600-603.191

Paper Titles

In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
p.175

Solution Growth of Off-Axis 4H-SiC for Power Device Application
p.179

Epitaxial TaC Films for the Selective Area Growth of SiC
p.183

Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N₂-He Atmosphere
p.187

Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique
p.191

Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS
p.195

Growth Kinetics of 3C-SiC on α-SiC by VLS
p.199

3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
p.203

Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates
p.207

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Solution Growth of 3C-SiC Single Crystals by Cold...

Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique

Abstract:

We have successfully grown 3C-SiC(111) single crystals 10mm x 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 105-106 /cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.