We have successfully grown 3C-SiC(111) single crystals 10mm x 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 105-106 /cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.